Application-based review of GaN HFETs

Edward A. Jones; Fred Wang; Burak Ozpineci

doi:10.1109/WiPDA.2014.6964617

Application-based review of GaN HFETs

Edward A. Jones, Fred Wang, Burak Ozpineci

Buildings and Transportation Science Div

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

166 Scopus citations

Abstract

Normally-off GaN-on-Si heterojunction field-effect transistors (HFETs) have been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. The natively depletion-mode device can be modified to be normally-off using a variety of techniques. For a power electronics engineer accustomed to Si-based converter design, there is inherent benefit to understanding the unique characteristics and challenges that distinguish GaN HFETs from Si MOSFETs. Dynamic R_ds-on self-commutated reverse conduction, gate voltage and current requirements, and the effects of very fast switching are explained from an applications perspective. This paper reviews available literature on commercial and near-commercial GaN HFETs, to prepare engineers with Si-based power electronics experience to effectively design GaN-based converters.

Original language	English
Title of host publication	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	24-29
Number of pages	6
ISBN (Electronic)	9781479954933
DOIs	https://doi.org/10.1109/WiPDA.2014.6964617
State	Published - Nov 20 2014
Event	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States Duration: Oct 13 2014 → Oct 15 2014

Publication series

Name	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Country/Territory	United States
City	Knoxville
Period	10/13/14 → 10/15/14

Funding

Funders	Funder number
Oak Ridge National Laboratory

Keywords

GaN Gallium Nitride
HEMT
HFET

Access to Document

10.1109/WiPDA.2014.6964617

Cite this

Jones, E. A., Wang, F., & Ozpineci, B. (2014). Application-based review of GaN HFETs. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 24-29). Article 6964617 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964617

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title = "Application-based review of GaN HFETs",

abstract = "Normally-off GaN-on-Si heterojunction field-effect transistors (HFETs) have been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. The natively depletion-mode device can be modified to be normally-off using a variety of techniques. For a power electronics engineer accustomed to Si-based converter design, there is inherent benefit to understanding the unique characteristics and challenges that distinguish GaN HFETs from Si MOSFETs. Dynamic Rds-on self-commutated reverse conduction, gate voltage and current requirements, and the effects of very fast switching are explained from an applications perspective. This paper reviews available literature on commercial and near-commercial GaN HFETs, to prepare engineers with Si-based power electronics experience to effectively design GaN-based converters.",

keywords = "GaN Gallium Nitride, HEMT, HFET",

author = "Jones, {Edward A.} and Fred Wang and Burak Ozpineci",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 ; Conference date: 13-10-2014 Through 15-10-2014",

year = "2014",

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doi = "10.1109/WiPDA.2014.6964617",

language = "English",

series = "2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014",

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Jones, EA, Wang, F & Ozpineci, B 2014, Application-based review of GaN HFETs. in 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014., 6964617, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Institute of Electrical and Electronics Engineers Inc., pp. 24-29, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Knoxville, United States, 10/13/14. https://doi.org/10.1109/WiPDA.2014.6964617

Application-based review of GaN HFETs. / Jones, Edward A.; Wang, Fred; Ozpineci, Burak.
2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 24-29 6964617 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wang, Fred

AU - Ozpineci, Burak

PY - 2014/11/20

Y1 - 2014/11/20

N2 - Normally-off GaN-on-Si heterojunction field-effect transistors (HFETs) have been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. The natively depletion-mode device can be modified to be normally-off using a variety of techniques. For a power electronics engineer accustomed to Si-based converter design, there is inherent benefit to understanding the unique characteristics and challenges that distinguish GaN HFETs from Si MOSFETs. Dynamic Rds-on self-commutated reverse conduction, gate voltage and current requirements, and the effects of very fast switching are explained from an applications perspective. This paper reviews available literature on commercial and near-commercial GaN HFETs, to prepare engineers with Si-based power electronics experience to effectively design GaN-based converters.

AB - Normally-off GaN-on-Si heterojunction field-effect transistors (HFETs) have been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. The natively depletion-mode device can be modified to be normally-off using a variety of techniques. For a power electronics engineer accustomed to Si-based converter design, there is inherent benefit to understanding the unique characteristics and challenges that distinguish GaN HFETs from Si MOSFETs. Dynamic Rds-on self-commutated reverse conduction, gate voltage and current requirements, and the effects of very fast switching are explained from an applications perspective. This paper reviews available literature on commercial and near-commercial GaN HFETs, to prepare engineers with Si-based power electronics experience to effectively design GaN-based converters.

KW - GaN Gallium Nitride

KW - HEMT

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ER -

Application-based review of GaN HFETs

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