Antimony cluster manipulation on the Si(001) surface by means of STM

I. I. Kravchenko, C. T. Salling, M. G. Lagally

Research output: Contribution to journalConference articlepeer-review

Abstract

We present results of the manipulation of antimony clusters on Si(001) by means of a scanning tunneling microscope. By adjusting tip-sample separation and pulse voltage, an antimony cluster can be removed from the sample surface without damaging it. The success rate of the removed-cluster redeposition from the tip back onto the surface is 30%. In the remainder of the attempts a square shaped structure is created that had a hillock in the center. The hillock exhibits a metallic-like I-V curve. Such a structure cannot be created without an Sb cluster previously removed from the surface and located on the tip.

Original languageEnglish
Pages (from-to)205-210
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume448
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

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