Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

J. Leiner; K. Tivakornsasithorn; X. Liu; J. K. Furdyna; M. Dobrowolska; B. J. Kirby; H. Lee; T. Yoo; Sanghoon Lee

doi:10.1063/1.3536669

Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

J. Leiner
, K. Tivakornsasithorn
, X. Liu
, J. K. Furdyna
, M. Dobrowolska
, B. J. Kirby
, H. Lee
, T. Yoo
, Sanghoon Lee

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Interlayer exchange coupling (IEC) between two Ga_0.95Mn _0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

Original language	English
Article number	07C307
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3536669
State	Published - Apr 1 2011
Externally published	Yes

Funding

This work was supported by the NSF Grant Nos. DMR06-03752 and DMR10-05851; by a NSF EAPSI Grant No. OISE-0914013; by Mid-career Researcher Program through NRF grant funded by the MEST (No. 2010-0025880) and (No. 2009-0085028).

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@article{634c155d4bed46ec900746025435a25e,

title = "Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer",

abstract = "Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.",

author = "J. Leiner and K. Tivakornsasithorn and X. Liu and Furdyna, \{J. K.\} and M. Dobrowolska and Kirby, \{B. J.\} and H. Lee and T. Yoo and Sanghoon Lee",

year = "2011",

month = apr,

day = "1",

doi = "10.1063/1.3536669",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

AU - Leiner, J.

AU - Tivakornsasithorn, K.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Dobrowolska, M.

AU - Kirby, B. J.

AU - Lee, H.

AU - Yoo, T.

AU - Lee, Sanghoon

PY - 2011/4/1

Y1 - 2011/4/1

N2 - Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

AB - Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

UR - https://www.scopus.com/pages/publications/79955446695

U2 - 10.1063/1.3536669

DO - 10.1063/1.3536669

M3 - Article

AN - SCOPUS:79955446695

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07C307

ER -

Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

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