Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer

J. Leiner, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Dobrowolska, B. J. Kirby, H. Lee, T. Yoo, Sanghoon Lee

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7 Scopus citations

Abstract

Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.

Original languageEnglish
Article number07C307
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
StatePublished - Apr 1 2011
Externally publishedYes

Funding

This work was supported by the NSF Grant Nos. DMR06-03752 and DMR10-05851; by a NSF EAPSI Grant No. OISE-0914013; by Mid-career Researcher Program through NRF grant funded by the MEST (No. 2010-0025880) and (No. 2009-0085028).

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