Anti-series normally-On SiC JFETs operating as bidirectional switches

M. Saadeh, Madhu S. Chinthavali, Burak Ozpineci, H. A. Mantooth

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

Ac-ac matrix converters and cycloconverters require bi-directional switches, which are typically formed by two antiparallel thyristors or a two-switch (IGBT/MOSFETs) two-diode configuration. As silicon carbide (SiC) and gallium nitride (GaN) devices become more available, it is possible to have higher voltage FETs with low conduction and switching losses and reverse conduction capability, which allows the elimination of the diodes in a bidirectional switch. This paper will investigate a bidirectional switch formation that is formed by using two normally-on SiC JFETs in anti-series with no anti-parallel diodes.

Original languageEnglish
Title of host publication2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013
Pages2892-2897
Number of pages6
DOIs
StatePublished - 2013
Event5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 - Denver, CO, United States
Duration: Sep 15 2013Sep 19 2013

Publication series

Name2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013

Conference

Conference5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013
Country/TerritoryUnited States
CityDenver, CO
Period09/15/1309/19/13

Keywords

  • Anti-Series
  • Bidirectional
  • Cycloconverter
  • JFET
  • Matrix Converter
  • Normall-On
  • SiC

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