TY - JOUR
T1 - Anomalously slow hot carrier cooling and insulator-to-metal transition in a photo-doped Mott insulator
AU - Choudhry, Usama
AU - Zhang, Jin
AU - Huang, Kewen
AU - Low, Emma
AU - Quan, Yujie
AU - Shaheen, Basamat
AU - Gnabasik, Ryan
AU - Yan, Jiaqiang
AU - Rubio, Angel
AU - Burch, Kenneth S.
AU - Liao, Bolin
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/12
Y1 - 2025/12
N2 - Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator α-RuCl3. At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems.
AB - Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator α-RuCl3. At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems.
UR - https://www.scopus.com/pages/publications/105003997494
U2 - 10.1038/s42005-025-02107-z
DO - 10.1038/s42005-025-02107-z
M3 - Article
AN - SCOPUS:105003997494
SN - 2399-3650
VL - 8
JO - Communications Physics
JF - Communications Physics
IS - 1
M1 - 190
ER -