Anomalous polarization reversal in strained thin films of CuIn P2 S6

Anna N. Morozovska, Eugene A. Eliseev, Ayana Ghosh, Mykola E. Yelisieiev, Yulian M. Vysochanskii, Sergei V. Kalinin

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6 Scopus citations

Abstract

Strain-induced transitions of polarization reversal in thin films of a ferrielectric CuInP2S6 (CIPS) with ideally conductive electrodes are explored using the Landau-Ginzburg-Devonshire approach with an eighth-order free energy expansion in polarization powers. Due to multiple potential wells, the height and position of which are temperature and strain dependent, the energy profiles of CIPS can flatten in the vicinity of the nonzero polarization states. Thereby, we reveal an unusually strong effect of a mismatch strain on the out-of-plane polarization reversal, hysteresis loop shape, dielectric susceptibility, and piezoelectric response of CIPS films. By varying the sign of the mismatch strain and its magnitude in a fairly narrow range, quasistatic hysteresisless paraelectric curves can transform into double, triple, and other types of pinched and single hysteresis loops. The strain effect on the polarization reversal is opposite, i.e., anomalous, in comparison with many other ferroelectric films, for which the out-of-plane remanent polarization and coercive field increase strongly for tensile strains and decrease or vanish for compressive strains. For definite values of temperature and mismatch strain, the low-frequency hysteresis loops of polarization may exhibit negative slope in a relatively narrow range of external field amplitude and frequency. The low-frequency susceptibility hysteresis loops, which correspond to the negative slope of polarization loops, contain only positive values, which can be giant in the entire range of field changes. The corresponding piezoresponse also reaches giant values, being maximal near coercive fields.

Original languageEnglish
Article number054107
JournalPhysical Review B
Volume108
Issue number5
DOIs
StatePublished - Aug 1 2023

Funding

S.V.K. was supported by the center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences under Award No. DE-SC0021118. A.N.M. acknowledges support from the National Research Fund of Ukraine (Project “Low-dimensional graphene-like transition metal dichalcogenides with controllable polar and electronic properties for advanced nanoelectronics and biomedical applications,” Grant Application No. 2020.02/0027). E.A.E. acknowledges support from the National Academy of Sciences of Ukraine. Authors are very grateful to Prof. Nicholas Morozovsky (NASU) for useful discussions and valuable suggestions.

FundersFunder number
center for 3D Ferroelectric Microelectronics
U.S. Department of Energy
Office of Science
Basic Energy SciencesDE-SC0021118
National Research Foundation of Ukraine2020.02/0027
National Academy of Sciences of Ukraine

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