Annealing effects on the electrical and photoelectric performance of SnS                         2                          field-effect transistor

Hong Xu; Jie Xing; Jing hao Lu; Xu Han; Danyang Li; Zhang Zhou; Li hong Bao; Hong jun Gao; Yuan Huang

doi:10.1016/j.apsusc.2019.04.094

Annealing effects on the electrical and photoelectric performance of SnS ₂ field-effect transistor

Hong Xu, Jie Xing, Jing hao Lu, Xu Han, Danyang Li, Zhang Zhou, Li hong Bao, Hong jun Gao, Yuan Huang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

SnS ₂ field effect transistor (FET) has been fabricated based on an exfoliated SnS ₂ flake. The effect of vacuum and sulfur-vapor annealing on the electric and optoelectronic properties of SnS ₂ FET have been investigated in detail. The experimental results indicate post-annealing, especially the sulfur-vapor annealing, has a strong impact on the electrical and photoelectric properties of SnS ₂ FET. The decreasing of source-drain current with annealing, the shift of threshold voltage and the exponential function of photocurrent varying with light intensity all exhibit a close relevance with surface states in SnS ₂ . The intriguing characteristics can be well explained by sulfur-vacancies-related trapping mechanism. These results not only advance the current understanding of the generation, trapping and recombination behavior of photoexcited carriers in two-dimensional materials, but also stimulate the potential applications in optoelectronic devices based on SnS ₂ .

Original language	English
Pages (from-to)	39-44
Number of pages	6
Journal	Applied Surface Science
Volume	484
DOIs	https://doi.org/10.1016/j.apsusc.2019.04.094
State	Published - Aug 1 2019
Externally published	Yes

Funding

This work has been supported by the National Natural Science Foundation of China (Grant No. 11104255 ) and Fundamental Research Funds for the Central Universities .

Funders	Funder number
National Natural Science Foundation of China	11104255
Fundamental Research Funds for the Central Universities

Keywords

2D material
Field effect transistor
Optoelectronics
SnS
Sulfur vacancy

Access to Document

10.1016/j.apsusc.2019.04.094

Cite this

Xu, H., Xing, J., Lu, J. H., Han, X., Li, D., Zhou, Z., Bao, L. H., Gao, H. J., & Huang, Y. (2019). Annealing effects on the electrical and photoelectric performance of SnS ₂ field-effect transistor Applied Surface Science, 484, 39-44. https://doi.org/10.1016/j.apsusc.2019.04.094

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title = " Annealing effects on the electrical and photoelectric performance of SnS 2 field-effect transistor ",

abstract = " SnS 2 field effect transistor (FET) has been fabricated based on an exfoliated SnS 2 flake. The effect of vacuum and sulfur-vapor annealing on the electric and optoelectronic properties of SnS 2 FET have been investigated in detail. The experimental results indicate post-annealing, especially the sulfur-vapor annealing, has a strong impact on the electrical and photoelectric properties of SnS 2 FET. The decreasing of source-drain current with annealing, the shift of threshold voltage and the exponential function of photocurrent varying with light intensity all exhibit a close relevance with surface states in SnS 2 . The intriguing characteristics can be well explained by sulfur-vacancies-related trapping mechanism. These results not only advance the current understanding of the generation, trapping and recombination behavior of photoexcited carriers in two-dimensional materials, but also stimulate the potential applications in optoelectronic devices based on SnS 2 .",

keywords = "2D material, Field effect transistor, Optoelectronics, SnS, Sulfur vacancy",

author = "Hong Xu and Jie Xing and Lu, {Jing hao} and Xu Han and Danyang Li and Zhang Zhou and Bao, {Li hong} and Gao, {Hong jun} and Yuan Huang",

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AU - Xu, Hong

AU - Xing, Jie

AU - Lu, Jing hao

AU - Han, Xu

AU - Li, Danyang

AU - Zhou, Zhang

AU - Bao, Li hong

AU - Gao, Hong jun

AU - Huang, Yuan

PY - 2019/8/1

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AB - SnS 2 field effect transistor (FET) has been fabricated based on an exfoliated SnS 2 flake. The effect of vacuum and sulfur-vapor annealing on the electric and optoelectronic properties of SnS 2 FET have been investigated in detail. The experimental results indicate post-annealing, especially the sulfur-vapor annealing, has a strong impact on the electrical and photoelectric properties of SnS 2 FET. The decreasing of source-drain current with annealing, the shift of threshold voltage and the exponential function of photocurrent varying with light intensity all exhibit a close relevance with surface states in SnS 2 . The intriguing characteristics can be well explained by sulfur-vacancies-related trapping mechanism. These results not only advance the current understanding of the generation, trapping and recombination behavior of photoexcited carriers in two-dimensional materials, but also stimulate the potential applications in optoelectronic devices based on SnS 2 .

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