Annealing dependence of exchange bias in MnO/Ga1-xMnxAs heterostructures

K. F. Eid, O. Maksimov, M. B. Stone, P. Schiffer, N. Samarth

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We discuss the annealing-dependence of exchange bias in Ga1-xMnxAs epilayers that are overgrown with Mn. Although pure Mn is a known antiferromagnet, we find that the asgrown Mn overlayer does not produce any exchange coupling with Ga1-xMnxAs. Rather, our studies indicate that annealing in air is essential for creating the standard signatures of exchange bias (a clear shift in the magnetization hysteresis loop and an increased coercive field). We use X-ray photoelectron spectroscopy to characterize the compositional depth profile of both as-grown and rapid thermal annealed samples. These studies demonstrate that the cleanest exchange bias arises when the Mn overlayer is completely converted into MnO.

Original languageEnglish
Pages (from-to)421-426
Number of pages6
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number3
DOIs
StatePublished - 2005
Externally publishedYes

Funding

The research has been supported by DARPA/ ONR under grants N00014-99-1093, and -00-1-0951, by ONR N00014-99-1-0071 and by NSF DMR 01-01318. We thank Dr Shallenberger for useful discussions and assistance with XPS measurements.

FundersFunder number
National Science FoundationDMR 01-01318
National Science Foundation
Office of Naval ResearchN00014-99-1093, N00014-99-1-0071, -00-1-0951
Office of Naval Research
Defense Advanced Research Projects Agency

    Keywords

    • Antiferromagnet.
    • Exchange bias;
    • Ferromagnetic
    • Semiconductor

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