Anisotropy of the magnetoresistance in Gd5Si2Ge 2

H. Tang; V. K. Pecharsky; G. D. Samolyuk; M. Zou; K. A. Gschneidner; V. P. Antropov; D. L. Schlagel; T. A. Lograsso

doi:10.1103/PhysRevLett.93.237203

Anisotropy of the magnetoresistance in Gd₅Si₂Ge ₂

H. Tang
, V. K. Pecharsky
, G. D. Samolyuk
, M. Zou
, K. A. Gschneidner
, V. P. Antropov
, D. L. Schlagel
, T. A. Lograsso

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The anisotropy of the magnetoresistance of single crystalline Gd ₅Si₂Ge₂ was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. The observed magnetoresistance of single crystalline Gd ₅Si₂Ge₂ was found to be negative and strongly anisotropic.

Original language	English
Article number	237203
Journal	Physical Review Letters
Volume	93
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.93.237203
State	Published - Dec 3 2004
Externally published	Yes

Funding

This work was supported by the Office of Basic Energy Sciences, Materials Sciences Division of the U.S. Department of Energy under Contract No. W-7405-ENG-82. G. D. S. and V. P. A. thank M. van Schilfgaarde for useful discussion and providing his TB LMTO code.

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10.1103/PhysRevLett.93.237203

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abstract = "The anisotropy of the magnetoresistance of single crystalline Gd 5Si2Ge2 was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60\%. The observed magnetoresistance of single crystalline Gd 5Si2Ge2 was found to be negative and strongly anisotropic.",

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AU - Tang, H.

AU - Pecharsky, V. K.

AU - Samolyuk, G. D.

AU - Zou, M.

AU - Gschneidner, K. A.

AU - Antropov, V. P.

AU - Schlagel, D. L.

AU - Lograsso, T. A.

PY - 2004/12/3

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N2 - The anisotropy of the magnetoresistance of single crystalline Gd 5Si2Ge2 was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. The observed magnetoresistance of single crystalline Gd 5Si2Ge2 was found to be negative and strongly anisotropic.

AB - The anisotropy of the magnetoresistance of single crystalline Gd 5Si2Ge2 was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. The observed magnetoresistance of single crystalline Gd 5Si2Ge2 was found to be negative and strongly anisotropic.

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Anisotropy of the magnetoresistance in Gd₅Si₂Ge ₂

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