Anisotropy of the magnetoresistance in Gd5Si2Ge 2

H. Tang; V. K. Pecharsky; G. D. Samolyuk; M. Zou; K. A. Gschneidner; V. P. Antropov; D. L. Schlagel; T. A. Lograsso

doi:10.1103/PhysRevLett.93.237203

Anisotropy of the magnetoresistance in Gd₅Si₂Ge ₂

H. Tang, V. K. Pecharsky, G. D. Samolyuk, M. Zou, K. A. Gschneidner, V. P. Antropov, D. L. Schlagel, T. A. Lograsso

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38 Scopus citations

Abstract

The anisotropy of the magnetoresistance of single crystalline Gd ₅Si₂Ge₂ was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. The observed magnetoresistance of single crystalline Gd ₅Si₂Ge₂ was found to be negative and strongly anisotropic.

Original language	English
Article number	237203
Journal	Physical Review Letters
Volume	93
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevLett.93.237203
State	Published - Dec 3 2004
Externally published	Yes

Funding

This work was supported by the Office of Basic Energy Sciences, Materials Sciences Division of the U.S. Department of Energy under Contract No. W-7405-ENG-82. G. D. S. and V. P. A. thank M. van Schilfgaarde for useful discussion and providing his TB LMTO code.

Funders	Funder number
U.S. Department of Energy	W-7405-ENG-82
U.S. Department of Energy
Basic Energy Sciences

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10.1103/PhysRevLett.93.237203

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@article{4e0279b2f7954939a526edefeff79ba0,

title = "Anisotropy of the magnetoresistance in Gd5Si2Ge 2",

abstract = "The anisotropy of the magnetoresistance of single crystalline Gd 5Si2Ge2 was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. The observed magnetoresistance of single crystalline Gd 5Si2Ge2 was found to be negative and strongly anisotropic.",

author = "H. Tang and Pecharsky, {V. K.} and Samolyuk, {G. D.} and M. Zou and Gschneidner, {K. A.} and Antropov, {V. P.} and Schlagel, {D. L.} and Lograsso, {T. A.}",

year = "2004",

month = dec,

day = "3",

doi = "10.1103/PhysRevLett.93.237203",

language = "English",

volume = "93",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "23",

}

TY - JOUR

T1 - Anisotropy of the magnetoresistance in Gd5Si2Ge 2

AU - Tang, H.

AU - Pecharsky, V. K.

AU - Samolyuk, G. D.

AU - Zou, M.

AU - Gschneidner, K. A.

AU - Antropov, V. P.

AU - Schlagel, D. L.

AU - Lograsso, T. A.

PY - 2004/12/3

Y1 - 2004/12/3

N2 - The anisotropy of the magnetoresistance of single crystalline Gd 5Si2Ge2 was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. The observed magnetoresistance of single crystalline Gd 5Si2Ge2 was found to be negative and strongly anisotropic.

AB - The anisotropy of the magnetoresistance of single crystalline Gd 5Si2Ge2 was investigated. The first principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. The observed magnetoresistance of single crystalline Gd 5Si2Ge2 was found to be negative and strongly anisotropic.

UR - http://www.scopus.com/inward/record.url?scp=42749099137&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.93.237203

DO - 10.1103/PhysRevLett.93.237203

M3 - Article

AN - SCOPUS:42749099137

SN - 0031-9007

VL - 93

JO - Physical Review Letters

JF - Physical Review Letters

IS - 23

M1 - 237203

ER -

Anisotropy of the magnetoresistance in Gd₅Si₂Ge ₂

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