Abstract
A 16- Ag film (about 7 atomic layers) grown epitaxially on Si(111)-(7×7) at about 100°C was studied by angle-resolved photoemission over a wide photon-energy range. Spectra taken of the well-ordered, smooth film showed sharp d-band peaks characteristic of single-crystal Ag(111), and a sharp peak derived from a surface state of Ag(111) in the band gap at point L. The bulk valence-band dispersions of Ag were reevaluated.
| Original language | English |
|---|---|
| Pages (from-to) | 2286-2288 |
| Number of pages | 3 |
| Journal | Physical Review B |
| Volume | 29 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1984 |
| Externally published | Yes |