Angle-resolved photoemission studies of epitaxial Ag films on Si(111)-(7×7)

A. L. Wachs; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.29.2286

Angle-resolved photoemission studies of epitaxial Ag films on Si(111)-(7×7)

A. L. Wachs, T. Miller, T. C. Chiang

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A 16- Ag film (about 7 atomic layers) grown epitaxially on Si(111)-(7×7) at about 100°C was studied by angle-resolved photoemission over a wide photon-energy range. Spectra taken of the well-ordered, smooth film showed sharp d-band peaks characteristic of single-crystal Ag(111), and a sharp peak derived from a surface state of Ag(111) in the band gap at point L. The bulk valence-band dispersions of Ag were reevaluated.

Original language	English
Pages (from-to)	2286-2288
Number of pages	3
Journal	Physical Review B
Volume	29
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.29.2286
State	Published - 1984
Externally published	Yes

Access to Document

10.1103/PhysRevB.29.2286

Cite this

@article{6465ed0fd9f64d7e88bbf43b71840c2f,

title = "Angle-resolved photoemission studies of epitaxial Ag films on Si(111)-(7×7)",

abstract = "A 16- Ag film (about 7 atomic layers) grown epitaxially on Si(111)-(7×7) at about 100°C was studied by angle-resolved photoemission over a wide photon-energy range. Spectra taken of the well-ordered, smooth film showed sharp d-band peaks characteristic of single-crystal Ag(111), and a sharp peak derived from a surface state of Ag(111) in the band gap at point L. The bulk valence-band dispersions of Ag were reevaluated.",

author = "Wachs, {A. L.} and T. Miller and Chiang, {T. C.}",

year = "1984",

doi = "10.1103/PhysRevB.29.2286",

language = "English",

volume = "29",

pages = "2286--2288",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Angle-resolved photoemission studies of epitaxial Ag films on Si(111)-(7×7)

AU - Wachs, A. L.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1984

Y1 - 1984

N2 - A 16- Ag film (about 7 atomic layers) grown epitaxially on Si(111)-(7×7) at about 100°C was studied by angle-resolved photoemission over a wide photon-energy range. Spectra taken of the well-ordered, smooth film showed sharp d-band peaks characteristic of single-crystal Ag(111), and a sharp peak derived from a surface state of Ag(111) in the band gap at point L. The bulk valence-band dispersions of Ag were reevaluated.

AB - A 16- Ag film (about 7 atomic layers) grown epitaxially on Si(111)-(7×7) at about 100°C was studied by angle-resolved photoemission over a wide photon-energy range. Spectra taken of the well-ordered, smooth film showed sharp d-band peaks characteristic of single-crystal Ag(111), and a sharp peak derived from a surface state of Ag(111) in the band gap at point L. The bulk valence-band dispersions of Ag were reevaluated.

UR - http://www.scopus.com/inward/record.url?scp=25944469392&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.29.2286

DO - 10.1103/PhysRevB.29.2286

M3 - Article

AN - SCOPUS:25944469392

SN - 0163-1829

VL - 29

SP - 2286

EP - 2288

JO - Physical Review B

JF - Physical Review B

IS - 4

ER -

Angle-resolved photoemission studies of epitaxial Ag films on Si(111)-(7×7)

Abstract

Access to Document

Other files and links

Fingerprint

Cite this