Analysis of v defects in GaN-based light emitting diodes by scanning transmission electron microscopy and electron beam induced current

C. L. Progl, C. M. Parish, J. P. Vitarelli, P. E. Russell

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

In the fabrication of InGaNGaN multiple quantum well light emitting diodes so-called V defects are common, but little is known about their electrical activity. Scanning transmission electron microscopy is capable of directly observing these defects, while electron beam induced current (EBIC) techniques can be used to probe electronic behavior of semiconductor defects. These techniques were combined to obtain localized measurements and our results indicate that V defects suppress the EBIC signal near the core of the defect and produce a displacement in the p-n junction location. Furthermore, the EBIC profile suggests that minority carrier diffusion lengths are longer inside the defect.

Original languageEnglish
Article number242103
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
StatePublished - 2008
Externally publishedYes

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