Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

Emre Gurpinar; Raj Sahu; Burak Ozpineci; Douglas Devoto

doi:10.1109/WiPDAAsia49671.2020.9360269

Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

Emre Gurpinar, Raj Sahu, Burak Ozpineci, Douglas Devoto

Buildings and Transportation Science Div

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.

Original language	English
Title of host publication	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728159553
DOIs	https://doi.org/10.1109/WiPDAAsia49671.2020.9360269
State	Published - Sep 23 2020
Event	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 - Suita, Japan Duration: Sep 23 2020 → Sep 25 2020

Publication series

Name	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

Conference

Conference	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Country/Territory	Japan
City	Suita
Period	09/23/20 → 09/25/20

Keywords

GaN
HEMT
Integration
Power Module
Substrate

Access to Document

10.1109/WiPDAAsia49671.2020.9360269

Cite this

Gurpinar, E., Sahu, R., Ozpineci, B., & Devoto, D. (2020). Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module. In 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 Article 9360269 (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia49671.2020.9360269

Gurpinar, Emre ; Sahu, Raj ; Ozpineci, Burak et al. / Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module. 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc., 2020. (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020).

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title = "Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module",

abstract = "In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.",

keywords = "GaN, HEMT, Integration, Power Module, Substrate",

author = "Emre Gurpinar and Raj Sahu and Burak Ozpineci and Douglas Devoto",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 ; Conference date: 23-09-2020 Through 25-09-2020",

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doi = "10.1109/WiPDAAsia49671.2020.9360269",

language = "English",

series = "2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020",

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Gurpinar, E, Sahu, R, Ozpineci, B & Devoto, D 2020, Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module. in 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020., 9360269, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, Suita, Japan, 09/23/20. https://doi.org/10.1109/WiPDAAsia49671.2020.9360269

Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module. / Gurpinar, Emre; Sahu, Raj; Ozpineci, Burak et al.
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9360269 (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

AU - Gurpinar, Emre

AU - Sahu, Raj

AU - Ozpineci, Burak

AU - Devoto, Douglas

PY - 2020/9/23

Y1 - 2020/9/23

N2 - In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.

AB - In this paper, analysis and optimization of a multi-layer organic substrate for high current GaN HEMT based power module are discussed. The organic multi-layer substrates can provide high electrical performance in terms of low parasitic inductance in the power loop by providing vertical layout, and shielding for reduction of common-mode noise, a common problem in fast switching power converters. Furthermore, high performance cooling solutions, such as micro-channel heat sinks, can be directly bonded to the substrate for optimum thermal management. The structure of the proposed architecture, thermal analysis and optimization of layer thickness, thermo-mechanical stress analysis of the GaN HEMT and development of a high-performance heat sink are discussed.

KW - GaN

KW - HEMT

KW - Integration

KW - Power Module

KW - Substrate

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DO - 10.1109/WiPDAAsia49671.2020.9360269

M3 - Conference contribution

AN - SCOPUS:85102240707

T3 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

BT - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020

PB - Institute of Electrical and Electronics Engineers Inc.

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Gurpinar E, Sahu R, Ozpineci B, Devoto D. Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module. In 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9360269. (2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020). doi: 10.1109/WiPDAAsia49671.2020.9360269

Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

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