Analog random-access memory in the AVLSI-RA process for an interpolating pad chamber

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Abstract

An analog memory for an Interpolating Pad Chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented.

Original languageEnglish
Pages261-265
Number of pages5
StatePublished - 1995
EventProceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4) - Norfolk, VA, USA
Duration: Oct 30 1994Nov 5 1994

Conference

ConferenceProceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4)
CityNorfolk, VA, USA
Period10/30/9411/5/94

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