Analog random-access memory in the AVLSI-RA process for an interpolating pad chamber

C. L. Britton; A. L. Wintenberg; K. F. Read; L. G. Clonts; E. J. Kennedy; R. S. Smith; B. K. Swann; J. A. Musser

Analog random-access memory in the AVLSI-RA process for an interpolating pad chamber

C. L. Britton, A. L. Wintenberg, K. F. Read, L. G. Clonts, E. J. Kennedy, R. S. Smith, B. K. Swann, J. A. Musser

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

An analog memory for an Interpolating Pad Chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented.

Original language	English
Pages	261-265
Number of pages	5
State	Published - 1995
Event	Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4) - Norfolk, VA, USA Duration: Oct 30 1994 → Nov 5 1994

Conference

Conference	Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4)
City	Norfolk, VA, USA
Period	10/30/94 → 11/5/94

Cite this

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title = "Analog random-access memory in the AVLSI-RA process for an interpolating pad chamber",

abstract = "An analog memory for an Interpolating Pad Chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented.",

author = "Britton, {C. L.} and Wintenberg, {A. L.} and Read, {K. F.} and Clonts, {L. G.} and Kennedy, {E. J.} and Smith, {R. S.} and Swann, {B. K.} and Musser, {J. A.}",

year = "1995",

language = "English",

pages = "261--265",

note = "Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4) ; Conference date: 30-10-1994 Through 05-11-1994",

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TY - CONF

T1 - Analog random-access memory in the AVLSI-RA process for an interpolating pad chamber

AU - Britton, C. L.

AU - Wintenberg, A. L.

AU - Read, K. F.

AU - Clonts, L. G.

AU - Kennedy, E. J.

AU - Smith, R. S.

AU - Swann, B. K.

AU - Musser, J. A.

PY - 1995

Y1 - 1995

N2 - An analog memory for an Interpolating Pad Chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented.

AB - An analog memory for an Interpolating Pad Chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented.

UR - http://www.scopus.com/inward/record.url?scp=0029216058&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029216058

SP - 261

EP - 265

T2 - Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4)

Y2 - 30 October 1994 through 5 November 1994

ER -

Analog random-access memory in the AVLSI-RA process for an interpolating pad chamber

Abstract

Conference

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