An investigation of phase transformation behavior in sputter-deposited PtMn thin films

C. X. Ji; Peter F. Ladwig; Ronald D. Ott; Y. Yang; Joshua J. Yang; Y. Austin Chang; Eric S. Linville; Jenny Gao; Bharat B. Pant

doi:10.1007/s11837-006-0182-x

An investigation of phase transformation behavior in sputter-deposited PtMn thin films

C. X. Ji, Peter F. Ladwig, Ronald D. Ott, Y. Yang, Joshua J. Yang, Y. Austin Chang, Eric S. Linville, Jenny Gao, Bharat B. Pant

Energy Science and Technology Directorat

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Sputter-deposited, equiatomic PtMn thin films have application in giant magnetoresistive spin valves, tunneling magnetoresistive spin valves, and magnetic random access memory. However, the as-deposited films are found to be a disordered A1 phase in a paramagnetic state rather than an antiferromagnetic phase with L1₀ ostructure, which is needed for device operation. Therefore, a post-annealing step is required to induce the phase transformation from the as-deposited A1 face-centered-cubic phase to the antiferromagnetic L1₀ phase. The A1 to L1₀ metastable transformation was studied by x-ray diffraction and differential-scanning calorimetry. An exothermic transformation enthalpy of -12.1 kJ/mol of atoms was determined. The transformation kinetics were simulated using the Johnson-Mehl-Avrami analysis.

Original language	English
Pages (from-to)	50-54
Number of pages	5
Journal	JOM
Volume	58
Issue number	6
DOIs	https://doi.org/10.1007/s11837-006-0182-x
State	Published - Jun 2006

Funding

The authors appreciate financial sup port from the Division of Materials Sciences, Office of Basic Energy Research of the Department of Energy through grant no. DE-FG02-99ER45777, the Wisconsin Distinguished Professorship, and Seagate Technology. A portion of this research was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725.

Funders	Funder number
Division of Materials Sciences
U.S. Department of Energy	DE-AC05-00OR22725, DE-FG02-99ER45777
Oak Ridge National Laboratory
UT-Battelle
Seagate Technology

Access to Document

10.1007/s11837-006-0182-x

Cite this

@article{dee173b98bac4c43b4d93f43fa273add,

title = "An investigation of phase transformation behavior in sputter-deposited PtMn thin films",

abstract = "Sputter-deposited, equiatomic PtMn thin films have application in giant magnetoresistive spin valves, tunneling magnetoresistive spin valves, and magnetic random access memory. However, the as-deposited films are found to be a disordered A1 phase in a paramagnetic state rather than an antiferromagnetic phase with L10 ostructure, which is needed for device operation. Therefore, a post-annealing step is required to induce the phase transformation from the as-deposited A1 face-centered-cubic phase to the antiferromagnetic L10 phase. The A1 to L10 metastable transformation was studied by x-ray diffraction and differential-scanning calorimetry. An exothermic transformation enthalpy of -12.1 kJ/mol of atoms was determined. The transformation kinetics were simulated using the Johnson-Mehl-Avrami analysis.",

author = "Ji, {C. X.} and Ladwig, {Peter F.} and Ott, {Ronald D.} and Y. Yang and Yang, {Joshua J.} and Chang, {Y. Austin} and Linville, {Eric S.} and Jenny Gao and Pant, {Bharat B.}",

year = "2006",

month = jun,

doi = "10.1007/s11837-006-0182-x",

language = "English",

volume = "58",

pages = "50--54",

journal = "JOM",

issn = "1047-4838",

publisher = "Springer",

number = "6",

}

TY - JOUR

T1 - An investigation of phase transformation behavior in sputter-deposited PtMn thin films

AU - Ji, C. X.

AU - Ladwig, Peter F.

AU - Ott, Ronald D.

AU - Yang, Y.

AU - Yang, Joshua J.

AU - Chang, Y. Austin

AU - Linville, Eric S.

AU - Gao, Jenny

AU - Pant, Bharat B.

PY - 2006/6

Y1 - 2006/6

N2 - Sputter-deposited, equiatomic PtMn thin films have application in giant magnetoresistive spin valves, tunneling magnetoresistive spin valves, and magnetic random access memory. However, the as-deposited films are found to be a disordered A1 phase in a paramagnetic state rather than an antiferromagnetic phase with L10 ostructure, which is needed for device operation. Therefore, a post-annealing step is required to induce the phase transformation from the as-deposited A1 face-centered-cubic phase to the antiferromagnetic L10 phase. The A1 to L10 metastable transformation was studied by x-ray diffraction and differential-scanning calorimetry. An exothermic transformation enthalpy of -12.1 kJ/mol of atoms was determined. The transformation kinetics were simulated using the Johnson-Mehl-Avrami analysis.

AB - Sputter-deposited, equiatomic PtMn thin films have application in giant magnetoresistive spin valves, tunneling magnetoresistive spin valves, and magnetic random access memory. However, the as-deposited films are found to be a disordered A1 phase in a paramagnetic state rather than an antiferromagnetic phase with L10 ostructure, which is needed for device operation. Therefore, a post-annealing step is required to induce the phase transformation from the as-deposited A1 face-centered-cubic phase to the antiferromagnetic L10 phase. The A1 to L10 metastable transformation was studied by x-ray diffraction and differential-scanning calorimetry. An exothermic transformation enthalpy of -12.1 kJ/mol of atoms was determined. The transformation kinetics were simulated using the Johnson-Mehl-Avrami analysis.

UR - http://www.scopus.com/inward/record.url?scp=33745307522&partnerID=8YFLogxK

U2 - 10.1007/s11837-006-0182-x

DO - 10.1007/s11837-006-0182-x

M3 - Article

AN - SCOPUS:33745307522

SN - 1047-4838

VL - 58

SP - 50

EP - 54

JO - JOM

JF - JOM

IS - 6

ER -

An investigation of phase transformation behavior in sputter-deposited PtMn thin films

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this