An integrated gate driver in 4H-SiC for power converter applications

M. Nance Ericson; S. Shane Frank; Charles L. Britton; Laura D. Marlino; Devon D. Janke; Dianne B. Ezell; Sei Hyung Ryu; Ranjan Lamichhane; A. Matt Francis; Paul D. Shepherd; Michael D. Glover; H. Alan Mantooth; Bret Whitaker; Zach Cole; Brandon Passmore; Ty McNutt

doi:10.1109/WiPDA.2014.6964626

An integrated gate driver in 4H-SiC for power converter applications

M. Nance Ericson, S. Shane Frank, Charles L. Britton, Laura D. Marlino, Devon D. Janke, Dianne B. Ezell, Sei Hyung Ryu, Ranjan Lamichhane, A. Matt Francis, Paul D. Shepherd, Michael D. Glover, H. Alan Mantooth, Bret Whitaker, Zach Cole, Brandon Passmore, Ty McNutt

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

A gate driver fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300°C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.

Original language	English
Title of host publication	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	66-69
Number of pages	4
ISBN (Electronic)	9781479954933
DOIs	https://doi.org/10.1109/WiPDA.2014.6964626
State	Published - Nov 20 2014
Event	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States Duration: Oct 13 2014 → Oct 15 2014

Publication series

Name	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Country/Territory	United States
City	Knoxville
Period	10/13/14 → 10/15/14

Keywords

Gate Driver
Power Electronics
SiC
Silicon Carbide
Wide Bandgap

Access to Document

10.1109/WiPDA.2014.6964626

Cite this

Ericson, M. N., Frank, S. S., Britton, C. L., Marlino, L. D., Janke, D. D., Ezell, D. B., Ryu, S. H., Lamichhane, R., Francis, A. M., Shepherd, P. D., Glover, M. D., Mantooth, H. A., Whitaker, B., Cole, Z., Passmore, B., & McNutt, T. (2014). An integrated gate driver in 4H-SiC for power converter applications. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 66-69). Article 6964626 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964626

@inproceedings{ec8d0378061a4c2d8b4e03cf053b63f5,

title = "An integrated gate driver in 4H-SiC for power converter applications",

abstract = "A gate driver fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300°C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.",

keywords = "Gate Driver, Power Electronics, SiC, Silicon Carbide, Wide Bandgap",

author = "Ericson, {M. Nance} and Frank, {S. Shane} and Britton, {Charles L.} and Marlino, {Laura D.} and Janke, {Devon D.} and Ezell, {Dianne B.} and Ryu, {Sei Hyung} and Ranjan Lamichhane and Francis, {A. Matt} and Shepherd, {Paul D.} and Glover, {Michael D.} and Mantooth, {H. Alan} and Bret Whitaker and Zach Cole and Brandon Passmore and Ty McNutt",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 ; Conference date: 13-10-2014 Through 15-10-2014",

year = "2014",

month = nov,

day = "20",

doi = "10.1109/WiPDA.2014.6964626",

language = "English",

series = "2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "66--69",

booktitle = "2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014",

}

Ericson, MN , Frank, SS , Britton, CL, Marlino, LD, Janke, DD, Ezell, DB, Ryu, SH, Lamichhane, R, Francis, AM, Shepherd, PD, Glover, MD, Mantooth, HA, Whitaker, B, Cole, Z, Passmore, B & McNutt, T 2014, An integrated gate driver in 4H-SiC for power converter applications. in 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014., 6964626, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Institute of Electrical and Electronics Engineers Inc., pp. 66-69, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Knoxville, United States, 10/13/14. https://doi.org/10.1109/WiPDA.2014.6964626

An integrated gate driver in 4H-SiC for power converter applications. / Ericson, M. Nance ; Frank, S. Shane ; Britton, Charles L. et al.
2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 66-69 6964626 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An integrated gate driver in 4H-SiC for power converter applications

AU - Ericson, M. Nance

AU - Frank, S. Shane

AU - Britton, Charles L.

AU - Marlino, Laura D.

AU - Janke, Devon D.

AU - Ezell, Dianne B.

AU - Ryu, Sei Hyung

AU - Lamichhane, Ranjan

AU - Francis, A. Matt

AU - Shepherd, Paul D.

AU - Glover, Michael D.

AU - Mantooth, H. Alan

AU - Whitaker, Bret

AU - Cole, Zach

AU - Passmore, Brandon

AU - McNutt, Ty

PY - 2014/11/20

Y1 - 2014/11/20

N2 - A gate driver fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300°C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.

AB - A gate driver fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300°C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.

KW - Gate Driver

KW - Power Electronics

KW - SiC

KW - Silicon Carbide

KW - Wide Bandgap

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U2 - 10.1109/WiPDA.2014.6964626

DO - 10.1109/WiPDA.2014.6964626

M3 - Conference contribution

AN - SCOPUS:84918536026

T3 - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

SP - 66

EP - 69

BT - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Y2 - 13 October 2014 through 15 October 2014

ER -

Ericson MN , Frank SS , Britton CL, Marlino LD, Janke DD, Ezell DB et al. An integrated gate driver in 4H-SiC for power converter applications. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 66-69. 6964626. (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). doi: 10.1109/WiPDA.2014.6964626

An integrated gate driver in 4H-SiC for power converter applications

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Keywords

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