TY - GEN
T1 - An Integrated Active Gate Driver for SiC MOSFETs
AU - Han, Dongwoo
AU - Kim, Sanghun
AU - Dong, Xiaofeng
AU - Guo, Zhehui
AU - Li, Hui
AU - Moon, Jinyeong
AU - Li, Yuan
AU - Peng, Fang Z.
AU - Moorthy, Radha Sree Krishna
AU - Chinthavali, Madhu
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - Silicon carbide (SiC) power devices operate at high switching frequencies with high voltages and good stabilities owing to their advantages in excellent breakdown field strength, heat dissipation characteristics, and electron saturation velocity, and so on. Therefore, SiC-based systems can achieve a high power density compared to conventional Si-based systems. However, high dv/dt and di/dt accompanied with high-speed switching operations can cause EMI noise issues. Traditional gate drivers cannot actively control such EMI noise problems. This digest proposes an integrated active gate driver (AGD) to solve the noise issues. The proposed AGD controls the switching speed through controllable AGD voltages in real-time according to the system feedbacks such as the DC-link voltage, output current, and device temperature. The proposed AGD enables switching devices to control the switching speed accurately under various system operational conditions. Simulation and experimental results are presented to verify the proposed method.
AB - Silicon carbide (SiC) power devices operate at high switching frequencies with high voltages and good stabilities owing to their advantages in excellent breakdown field strength, heat dissipation characteristics, and electron saturation velocity, and so on. Therefore, SiC-based systems can achieve a high power density compared to conventional Si-based systems. However, high dv/dt and di/dt accompanied with high-speed switching operations can cause EMI noise issues. Traditional gate drivers cannot actively control such EMI noise problems. This digest proposes an integrated active gate driver (AGD) to solve the noise issues. The proposed AGD controls the switching speed through controllable AGD voltages in real-time according to the system feedbacks such as the DC-link voltage, output current, and device temperature. The proposed AGD enables switching devices to control the switching speed accurately under various system operational conditions. Simulation and experimental results are presented to verify the proposed method.
KW - Active gate driver (AGD)
KW - EMI noise
KW - Silicon carbide (SiC)
UR - http://www.scopus.com/inward/record.url?scp=85123981127&partnerID=8YFLogxK
U2 - 10.1109/WiPDA49284.2021.9645086
DO - 10.1109/WiPDA49284.2021.9645086
M3 - Conference contribution
AN - SCOPUS:85123981127
T3 - 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
SP - 305
EP - 309
BT - 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021
Y2 - 7 November 2021 through 11 November 2021
ER -