An In0.5Ga0.5N nanowire photoanode for harvesting deep visible light photons

S. Fan; S. Y. Woo; S. Vanka; G. A. Botton; Z. Mi

doi:10.1063/1.4958964

An In_0.5Ga_0.5N nanowire photoanode for harvesting deep visible light photons

S. Fan, S. Y. Woo, S. Vanka, G. A. Botton, Z. Mi

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

III-nitride semiconductors hold tremendous promise for realizing high efficiency photoelectrodes. However, previously reported InGaN photoelectrodes generally exhibit very low photocurrent densities, due to the presence of extensive defects, dislocations, and indium phase separation. Here, we show that In_0.5Ga_0.5N nanowires with nearly homogeneous indium distribution can be achieved by plasma-assisted molecular beam epitaxy. Under AM1.5G one sun illumination, the InGaN nanowire photoanode exhibits a photocurrent density of 7.3 mA/cm² at 1.2 V (vs. NHE) in 1M HBr. The incident-photon-to-current efficiency is above 10% at 650 nm, which is significantly higher than previously reported values of metal oxide photoelectrodes.

Original language	English
Article number	076106
Journal	APL Materials
Volume	4
Issue number	7
DOIs	https://doi.org/10.1063/1.4958964
State	Published - Jul 1 2016
Externally published	Yes

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title = "An In0.5Ga0.5N nanowire photoanode for harvesting deep visible light photons",

abstract = "III-nitride semiconductors hold tremendous promise for realizing high efficiency photoelectrodes. However, previously reported InGaN photoelectrodes generally exhibit very low photocurrent densities, due to the presence of extensive defects, dislocations, and indium phase separation. Here, we show that In0.5Ga0.5N nanowires with nearly homogeneous indium distribution can be achieved by plasma-assisted molecular beam epitaxy. Under AM1.5G one sun illumination, the InGaN nanowire photoanode exhibits a photocurrent density of 7.3 mA/cm2 at 1.2 V (vs. NHE) in 1M HBr. The incident-photon-to-current efficiency is above 10% at 650 nm, which is significantly higher than previously reported values of metal oxide photoelectrodes.",

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T1 - An In0.5Ga0.5N nanowire photoanode for harvesting deep visible light photons

AU - Fan, S.

AU - Woo, S. Y.

AU - Vanka, S.

AU - Botton, G. A.

AU - Mi, Z.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - III-nitride semiconductors hold tremendous promise for realizing high efficiency photoelectrodes. However, previously reported InGaN photoelectrodes generally exhibit very low photocurrent densities, due to the presence of extensive defects, dislocations, and indium phase separation. Here, we show that In0.5Ga0.5N nanowires with nearly homogeneous indium distribution can be achieved by plasma-assisted molecular beam epitaxy. Under AM1.5G one sun illumination, the InGaN nanowire photoanode exhibits a photocurrent density of 7.3 mA/cm2 at 1.2 V (vs. NHE) in 1M HBr. The incident-photon-to-current efficiency is above 10% at 650 nm, which is significantly higher than previously reported values of metal oxide photoelectrodes.

AB - III-nitride semiconductors hold tremendous promise for realizing high efficiency photoelectrodes. However, previously reported InGaN photoelectrodes generally exhibit very low photocurrent densities, due to the presence of extensive defects, dislocations, and indium phase separation. Here, we show that In0.5Ga0.5N nanowires with nearly homogeneous indium distribution can be achieved by plasma-assisted molecular beam epitaxy. Under AM1.5G one sun illumination, the InGaN nanowire photoanode exhibits a photocurrent density of 7.3 mA/cm2 at 1.2 V (vs. NHE) in 1M HBr. The incident-photon-to-current efficiency is above 10% at 650 nm, which is significantly higher than previously reported values of metal oxide photoelectrodes.

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An In_0.5Ga_0.5N nanowire photoanode for harvesting deep visible light photons

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