An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

S. Zhao; X. Liu; S. Y. Woo; J. Kang; G. A. Botton; Z. Mi

doi:10.1063/1.4927602

An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

S. Zhao, X. Liu, S. Y. Woo, J. Kang, G. A. Botton, Z. Mi

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1nm. The threshold current density is 200A/cm² at 77K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

Original language	English
Article number	043101
Journal	Applied Physics Letters
Volume	107
Issue number	4
DOIs	https://doi.org/10.1063/1.4927602
State	Published - Jul 27 2015
Externally published	Yes

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© 2015 AIP Publishing LLC.

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abstract = "We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1nm. The threshold current density is 200A/cm2 at 77K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.",

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AU - Zhao, S.

AU - Liu, X.

AU - Woo, S. Y.

AU - Kang, J.

AU - Botton, G. A.

AU - Mi, Z.

PY - 2015/7/27

Y1 - 2015/7/27

N2 - We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1nm. The threshold current density is 200A/cm2 at 77K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

AB - We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1nm. The threshold current density is 200A/cm2 at 77K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires.

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VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

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ER -

An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band

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