An Analog Random Access Memory in the AVLSI-RA Process for an Interpolating Pad Chamber

C. L. Britton; A. L. Wintenberg; K. F. Read; L. G. Clonts; E. J. Kennedy; R. S. Smith; B. K. Swann; J. A. Musser

doi:10.1109/23.489423

An Analog Random Access Memory in the AVLSI-RA Process for an Interpolating Pad Chamber

C. L. Britton, A. L. Wintenberg, K. F. Read, L. G. Clonts, E. J. Kennedy, R. S. Smith, B. K. Swann, J. A. Musser

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3 Scopus citations

Abstract

An analog memory for an interpolating pad chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-b performance, a readout settling time of 500 ns following read enable, an input and output dynamic range of +/- 2.25 V, a corrected rms pedestal of approximately 5 mV or less, and a power dissipation of less than 10 mW/channel. The pre- and post-radiation measurements to 5 MRad1 are presented.

Original language	English
Pages (from-to)	2255-2259
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	42
Issue number	6
DOIs	https://doi.org/10.1109/23.489423
State	Published - Dec 1995

Funding

'Recent calibrations of the dosimetry and test fixture have revealed that the actual doses were 80% of those stated. The maximum was, therefore, 4 MRad. Manuscript received January 12, 1995; revised Aug. 15, 1995. This work was supported by the U.S. Department of Energy and performed at Oak Ridge National Laboratory, managed by Martin Marietta Energy Systems, Inc., Contract DE-AC05-840R21400. C. L. Britton, Jr., A. L. Wittenberg, and K. F. Read are with the Oak Ridge National Laboratory, Oak Ridge, TN, USA. L. G. Clonts, E. J. Kennedy, R. S. Smith, and B. K. Swann are with the University of Tennessee, Knoxville, TN, USA. J. A. Musser is with the Physics Department, Indiana University, Bloomington, IN, USA. IEEE Log Number 9415493.

Funders	Funder number
U.S. Department of Energy
Oak Ridge National Laboratory	DE-AC05-840R21400

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abstract = "An analog memory for an interpolating pad chamber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-b performance, a readout settling time of 500 ns following read enable, an input and output dynamic range of +/- 2.25 V, a corrected rms pedestal of approximately 5 mV or less, and a power dissipation of less than 10 mW/channel. The pre- and post-radiation measurements to 5 MRad1 are presented.",

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AU - Clonts, L. G.

AU - Kennedy, E. J.

AU - Smith, R. S.

AU - Swann, B. K.

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An Analog Random Access Memory in the AVLSI-RA Process for an Interpolating Pad Chamber

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