TY - GEN
T1 - An Analog Active Gate Drive Circuit Architecture for Wide Band Gap Devices
AU - Ramabhadran, Ramanujam
AU - Todorovic, Maja Harfman
AU - Li, Cong
AU - Asa, Erdem
AU - Huh, Kum Kang
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - With the increased usage of SiC and GaN devices in power converters, it is apparent to engineers that the benefits of these devices for low switching losses have to be balanced against two deterrents: (1) the faster rise and fall times of these devices lead to increased harmonic content, making it more difficult to meet Electromagnetic Compatibility (EMC) regulations; and (2) increased sensitivity to parasitic elements in the board layout, leading to higher dvDS/dt and diD/dt with higher current and voltage peak stresses. Active gate drives are thus needed to regulate different regions of switching to achieve the optimal tradeoff between switching loss and EMC. We present a simple analog circuit architecture for an active gate drive. Turn on and turn off tests with SiC modules and discrete parts are discussed with experimental results.
AB - With the increased usage of SiC and GaN devices in power converters, it is apparent to engineers that the benefits of these devices for low switching losses have to be balanced against two deterrents: (1) the faster rise and fall times of these devices lead to increased harmonic content, making it more difficult to meet Electromagnetic Compatibility (EMC) regulations; and (2) increased sensitivity to parasitic elements in the board layout, leading to higher dvDS/dt and diD/dt with higher current and voltage peak stresses. Active gate drives are thus needed to regulate different regions of switching to achieve the optimal tradeoff between switching loss and EMC. We present a simple analog circuit architecture for an active gate drive. Turn on and turn off tests with SiC modules and discrete parts are discussed with experimental results.
KW - Active Gate Drive
KW - SiC
KW - Wide Band Gap Devices
UR - http://www.scopus.com/inward/record.url?scp=85076740358&partnerID=8YFLogxK
U2 - 10.1109/ECCE.2019.8912218
DO - 10.1109/ECCE.2019.8912218
M3 - Conference contribution
AN - SCOPUS:85076740358
T3 - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
SP - 380
EP - 386
BT - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019
Y2 - 29 September 2019 through 3 October 2019
ER -