Amplitude of photostructural changes in chalcogenide vitreous semiconductors

V. K. Malinovsky; A. P. Sokolov; V. G. Zhdanov

doi:10.1016/0038-1098(84)91080-9

Amplitude of photostructural changes in chalcogenide vitreous semiconductors

V. K. Malinovsky, A. P. Sokolov, V. G. Zhdanov

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8 Scopus citations

Abstract

It is shown that a position of an optical absorption edge (OAE) of amorphous AsSe and As₂S₃ films irradiated by light up to saturation is independent on T_exp the temperature at which the sample is exposed, and the amplitude of a reversible photoinduced shift of OAE ΔE is determined by its thermal shift ΔE as it is heated from T_exp up to the glass-transition temperature T_g. So, in order to obtain maximum photoinduced changes we need to use materials with maximum thermal variations of the forbidden zone width, and to tend to a greater difference between T_g and T_exp. The obtained results are well explained within the scope of the local heating model.

Original language	English
Pages (from-to)	647-650
Number of pages	4
Journal	Solid State Communications
Volume	51
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(84)91080-9
State	Published - Aug 1984
Externally published	Yes

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title = "Amplitude of photostructural changes in chalcogenide vitreous semiconductors",

abstract = "It is shown that a position of an optical absorption edge (OAE) of amorphous AsSe and As2S3 films irradiated by light up to saturation is independent on Texp the temperature at which the sample is exposed, and the amplitude of a reversible photoinduced shift of OAE ΔE is determined by its thermal shift ΔE as it is heated from Texp up to the glass-transition temperature Tg. So, in order to obtain maximum photoinduced changes we need to use materials with maximum thermal variations of the forbidden zone width, and to tend to a greater difference between Tg and Texp. The obtained results are well explained within the scope of the local heating model.",

author = "Malinovsky, {V. K.} and Sokolov, {A. P.} and Zhdanov, {V. G.}",

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T1 - Amplitude of photostructural changes in chalcogenide vitreous semiconductors

AU - Malinovsky, V. K.

AU - Sokolov, A. P.

AU - Zhdanov, V. G.

PY - 1984/8

Y1 - 1984/8

N2 - It is shown that a position of an optical absorption edge (OAE) of amorphous AsSe and As2S3 films irradiated by light up to saturation is independent on Texp the temperature at which the sample is exposed, and the amplitude of a reversible photoinduced shift of OAE ΔE is determined by its thermal shift ΔE as it is heated from Texp up to the glass-transition temperature Tg. So, in order to obtain maximum photoinduced changes we need to use materials with maximum thermal variations of the forbidden zone width, and to tend to a greater difference between Tg and Texp. The obtained results are well explained within the scope of the local heating model.

AB - It is shown that a position of an optical absorption edge (OAE) of amorphous AsSe and As2S3 films irradiated by light up to saturation is independent on Texp the temperature at which the sample is exposed, and the amplitude of a reversible photoinduced shift of OAE ΔE is determined by its thermal shift ΔE as it is heated from Texp up to the glass-transition temperature Tg. So, in order to obtain maximum photoinduced changes we need to use materials with maximum thermal variations of the forbidden zone width, and to tend to a greater difference between Tg and Texp. The obtained results are well explained within the scope of the local heating model.

UR - http://www.scopus.com/inward/record.url?scp=0021471970&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(84)91080-9

DO - 10.1016/0038-1098(84)91080-9

M3 - Article

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SN - 0038-1098

VL - 51

SP - 647

EP - 650

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Amplitude of photostructural changes in chalcogenide vitreous semiconductors

Abstract

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