Abstract
Poly-crystalline silicon (poly-Si) thin films have been prepared by aluminum induced crystallization (AIC) technique. Hydrogenated amorphous silicon (a-Si:H) thin films were prepared by sputtering a silicon target in hydrogen and argon ambient. It was observed that deposition rates increased more than two folds with the introduction of the hydrogen in the deposition chamber. The a-Si:H thin films were coated with a thin layer of sputtered aluminum (Al). X-ray diffraction (XRD) confirmed that the crystallization commenced at as low as 225°C. The depth profile of the annealed samples, obtained by scanning Auger microscopy (SAM), did not show any layer exchange below 300°C. The SAM analysis showed clear layer exchange in the higher temperature (>350°C) region.
Original language | English |
---|---|
Pages (from-to) | 1088-1091 |
Number of pages | 4 |
Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
State | Published - 2005 |
Event | 31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005 |