Aluminum INDUCED crystallization of sputtered hydrogenated amorphous silicon for economically viable thin film silicon solar cells

Maruf Hossain, Husam H. Abu-Safe, Hameed Naseem, William D. Brown, Harry Meyer

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Poly-crystalline silicon (poly-Si) thin films have been prepared by aluminum induced crystallization (AIC) technique. Hydrogenated amorphous silicon (a-Si:H) thin films were prepared by sputtering a silicon target in hydrogen and argon ambient. It was observed that deposition rates increased more than two folds with the introduction of the hydrogen in the deposition chamber. The a-Si:H thin films were coated with a thin layer of sputtered aluminum (Al). X-ray diffraction (XRD) confirmed that the crystallization commenced at as low as 225°C. The depth profile of the annealed samples, obtained by scanning Auger microscopy (SAM), did not show any layer exchange below 300°C. The SAM analysis showed clear layer exchange in the higher temperature (>350°C) region.

Original languageEnglish
Pages (from-to)1088-1091
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005

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