Abstract
Although high critical current density (Jc) YBCO can be deposited on rolling assisted biaxially-textured substrates (RA-BITS) with the YSZ/CeO2/Ni architecture, improvement in uniformity is needed due to the presence of two-component YBCO epitaxy and cracking in the CeO2 buffer. We have determined that Yb2O3 is an excellent buffer material that provides a single-component YBCO epitaxy. In addition, crack-free epitaxial Y2O3 can be consistently deposited onto textured Ni substrates. High quality YBCO films have been deposited, and Jc as high as 1.8×106 A/cm2 at 77 K has been obtained on this Yb2O3/Y2O3/Ni alternative RABiTS architecture.
Original language | English |
---|---|
Pages (from-to) | L178-L180 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 38 |
Issue number | 2 B |
DOIs | |
State | Published - 1999 |