Alternating-current electrodeposition (metafuse) process for forming thallium-oxide superconductors

R. N. Bhattacharya; M. Paranthaman

doi:10.1016/0921-4534(95)00380-0

Alternating-current electrodeposition (metafuse) process for forming thallium-oxide superconductors

R. N. Bhattacharya, M. Paranthaman

Nanomaterials Chemistry Group

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Thallium-free precursor films with the composition Ba₂Ca₂Cu₃Ag_0.37O_x (BCCO-Ag) were prepared on Ag foil by an alternating current electrodeposition (Metafuse) [A. Joseph, US Patent No. 4,764,654 (1988); No. 4,840,711 (1989)] process. The results show that the metafuse deposition process is fully capable of synthesizing controlled 223 stoichiometric films at various thicknesses (1-12 microns). The deposited precursor films were processed using a two-zone thallination furnace, which employs a Tl source zone and a separate sample zone, both within a controlled O₂ ambient environment. After thallination, the films were predominantly c-axis oriented TlBa₂Ca₂Cu₃O_y (1223) phase. The resistive transition for a representative film is fairly sharp, with an onset temperature of 118 K and a zero-resistance temperature of 110 K. At 77 K and self-field, the critical current densities of the 2 μm, 4 μm and 12 μm films were 1.96 × 10⁴ A/cm², 1.66 × 10⁴ A/cm², and 1 × 10⁴ A/cm², respectively.

Original language	English
Pages (from-to)	105-109
Number of pages	5
Journal	Physica C: Superconductivity and its Applications
Volume	251
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4534(95)00380-0
State	Published - Sep 1 1995

Funding

RNB (NREL) thanks Davis, Joseph, and Negley for supporting the metafuse work (NREL Contract No. 1287). The work of MP (ORNL) was supported by the Division of Material Sciences, Office of Basic Energy Sciences, U.S. DOE, under contract DE-AC05-84OR21400 with Martin-Marietta Energy Systems, Inc. The authors also thank John Budai and Patrick Martin (ORNL) for assistance with X-ray and transport current measurements.

Funders	Funder number
Davis, Joseph, and Negley	1287
Division of Material Sciences
U.S. Department of Energy	DE-AC05-84OR21400
Basic Energy Sciences
Oak Ridge National Laboratory
National Renewable Energy Laboratory

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abstract = "Thallium-free precursor films with the composition Ba2Ca2Cu3Ag0.37Ox (BCCO-Ag) were prepared on Ag foil by an alternating current electrodeposition (Metafuse) [A. Joseph, US Patent No. 4,764,654 (1988); No. 4,840,711 (1989)] process. The results show that the metafuse deposition process is fully capable of synthesizing controlled 223 stoichiometric films at various thicknesses (1-12 microns). The deposited precursor films were processed using a two-zone thallination furnace, which employs a Tl source zone and a separate sample zone, both within a controlled O2 ambient environment. After thallination, the films were predominantly c-axis oriented TlBa2Ca2Cu3Oy (1223) phase. The resistive transition for a representative film is fairly sharp, with an onset temperature of 118 K and a zero-resistance temperature of 110 K. At 77 K and self-field, the critical current densities of the 2 μm, 4 μm and 12 μm films were 1.96 × 104 A/cm2, 1.66 × 104 A/cm2, and 1 × 104 A/cm2, respectively.",

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N2 - Thallium-free precursor films with the composition Ba2Ca2Cu3Ag0.37Ox (BCCO-Ag) were prepared on Ag foil by an alternating current electrodeposition (Metafuse) [A. Joseph, US Patent No. 4,764,654 (1988); No. 4,840,711 (1989)] process. The results show that the metafuse deposition process is fully capable of synthesizing controlled 223 stoichiometric films at various thicknesses (1-12 microns). The deposited precursor films were processed using a two-zone thallination furnace, which employs a Tl source zone and a separate sample zone, both within a controlled O2 ambient environment. After thallination, the films were predominantly c-axis oriented TlBa2Ca2Cu3Oy (1223) phase. The resistive transition for a representative film is fairly sharp, with an onset temperature of 118 K and a zero-resistance temperature of 110 K. At 77 K and self-field, the critical current densities of the 2 μm, 4 μm and 12 μm films were 1.96 × 104 A/cm2, 1.66 × 104 A/cm2, and 1 × 104 A/cm2, respectively.

AB - Thallium-free precursor films with the composition Ba2Ca2Cu3Ag0.37Ox (BCCO-Ag) were prepared on Ag foil by an alternating current electrodeposition (Metafuse) [A. Joseph, US Patent No. 4,764,654 (1988); No. 4,840,711 (1989)] process. The results show that the metafuse deposition process is fully capable of synthesizing controlled 223 stoichiometric films at various thicknesses (1-12 microns). The deposited precursor films were processed using a two-zone thallination furnace, which employs a Tl source zone and a separate sample zone, both within a controlled O2 ambient environment. After thallination, the films were predominantly c-axis oriented TlBa2Ca2Cu3Oy (1223) phase. The resistive transition for a representative film is fairly sharp, with an onset temperature of 118 K and a zero-resistance temperature of 110 K. At 77 K and self-field, the critical current densities of the 2 μm, 4 μm and 12 μm films were 1.96 × 104 A/cm2, 1.66 × 104 A/cm2, and 1 × 104 A/cm2, respectively.

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Alternating-current electrodeposition (metafuse) process for forming thallium-oxide superconductors

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