AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

David Arto Laleyan; Songrui Zhao; Steffi Y. Woo; Hong Nhung Tran; Huy Binh Le; Thomas Szkopek; Hong Guo; Gianluigi A. Botton; Zetian Mi

doi:10.1021/acs.nanolett.7b01068

AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

David Arto Laleyan, Songrui Zhao, Steffi Y. Woo, Hong Nhung Tran, Huy Binh Le, Thomas Szkopek, Hong Guo, Gianluigi A. Botton, Zetian Mi

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet (DUV) light sources. Devices operating in the near-UV spectral range have been realized; to date, however, the achievement of high-efficiency light-emitting diodes (LEDs) operating in the UV-C band (200-280 nm specifically) has been hindered by the extremely inefficient p-type conduction in AlGaN and the lack of DUV-transparent conductive electrodes. Here, we show that these critical challenges can be addressed by Mg dopant-free Al(Ga)N/h-BN nanowire heterostructures. By exploiting the acceptor-like boron vacancy formation, we have demonstrated that h-BN can function as a highly conductive, DUV-transparent electrode; the hole concentration is 10²⁰ cm^-3 at room temperature, which is 10 orders of magnitude higher than that previously measured for Mg-doped AlN epilayers. We have further demonstrated the first Al(Ga)N/h-BN LED, which exhibits strong emission at 210 nm. This work also reports the first achievement of Mg-free III-nitride LEDs that can exhibit high electrical efficiency (80% at 20 A/cm²).

Original language	English
Pages (from-to)	3738-3743
Number of pages	6
Journal	Nano Letters
Volume	17
Issue number	6
DOIs	https://doi.org/10.1021/acs.nanolett.7b01068
State	Published - Jun 14 2017
Externally published	Yes

Funding

This work was supported by the Natural Sciences and Engineering Research Council of Canada and the U.S. Army Research Office under the grant no. W911NF-16-1-0582 and grant no. W911NF-17-1-0109. High-resolution SEM and STEM were performed in the Canadian Centre for Electron Microscopy a national facility supported by NSERC, the Canada Foundation for Innovation under the MSI program, and McMaster University.

Funders	Funder number
Army Research Office	W911NF-16-1-0582, W911NF-17-1-0109
McMaster University
Natural Sciences and Engineering Research Council of Canada
Canada Foundation for Innovation

Keywords

AlN
Deep-ultraviolet LED
h-BN
heterostructures
nanowires
p-type conduction

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10.1021/acs.nanolett.7b01068

Cite this

@article{c6db805cbe1243129c987999d2e1fd1c,

title = "AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics",

abstract = "Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet (DUV) light sources. Devices operating in the near-UV spectral range have been realized; to date, however, the achievement of high-efficiency light-emitting diodes (LEDs) operating in the UV-C band (200-280 nm specifically) has been hindered by the extremely inefficient p-type conduction in AlGaN and the lack of DUV-transparent conductive electrodes. Here, we show that these critical challenges can be addressed by Mg dopant-free Al(Ga)N/h-BN nanowire heterostructures. By exploiting the acceptor-like boron vacancy formation, we have demonstrated that h-BN can function as a highly conductive, DUV-transparent electrode; the hole concentration is 1020 cm-3 at room temperature, which is 10 orders of magnitude higher than that previously measured for Mg-doped AlN epilayers. We have further demonstrated the first Al(Ga)N/h-BN LED, which exhibits strong emission at 210 nm. This work also reports the first achievement of Mg-free III-nitride LEDs that can exhibit high electrical efficiency (80% at 20 A/cm2).",

keywords = "AlN, Deep-ultraviolet LED, h-BN, heterostructures, nanowires, p-type conduction",

author = "Laleyan, {David Arto} and Songrui Zhao and Woo, {Steffi Y.} and Tran, {Hong Nhung} and Le, {Huy Binh} and Thomas Szkopek and Hong Guo and Botton, {Gianluigi A.} and Zetian Mi",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = jun,

day = "14",

doi = "10.1021/acs.nanolett.7b01068",

language = "English",

volume = "17",

pages = "3738--3743",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

AU - Laleyan, David Arto

AU - Zhao, Songrui

AU - Woo, Steffi Y.

AU - Tran, Hong Nhung

AU - Le, Huy Binh

AU - Szkopek, Thomas

AU - Guo, Hong

AU - Botton, Gianluigi A.

AU - Mi, Zetian

PY - 2017/6/14

Y1 - 2017/6/14

N2 - Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet (DUV) light sources. Devices operating in the near-UV spectral range have been realized; to date, however, the achievement of high-efficiency light-emitting diodes (LEDs) operating in the UV-C band (200-280 nm specifically) has been hindered by the extremely inefficient p-type conduction in AlGaN and the lack of DUV-transparent conductive electrodes. Here, we show that these critical challenges can be addressed by Mg dopant-free Al(Ga)N/h-BN nanowire heterostructures. By exploiting the acceptor-like boron vacancy formation, we have demonstrated that h-BN can function as a highly conductive, DUV-transparent electrode; the hole concentration is 1020 cm-3 at room temperature, which is 10 orders of magnitude higher than that previously measured for Mg-doped AlN epilayers. We have further demonstrated the first Al(Ga)N/h-BN LED, which exhibits strong emission at 210 nm. This work also reports the first achievement of Mg-free III-nitride LEDs that can exhibit high electrical efficiency (80% at 20 A/cm2).

AB - Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet (DUV) light sources. Devices operating in the near-UV spectral range have been realized; to date, however, the achievement of high-efficiency light-emitting diodes (LEDs) operating in the UV-C band (200-280 nm specifically) has been hindered by the extremely inefficient p-type conduction in AlGaN and the lack of DUV-transparent conductive electrodes. Here, we show that these critical challenges can be addressed by Mg dopant-free Al(Ga)N/h-BN nanowire heterostructures. By exploiting the acceptor-like boron vacancy formation, we have demonstrated that h-BN can function as a highly conductive, DUV-transparent electrode; the hole concentration is 1020 cm-3 at room temperature, which is 10 orders of magnitude higher than that previously measured for Mg-doped AlN epilayers. We have further demonstrated the first Al(Ga)N/h-BN LED, which exhibits strong emission at 210 nm. This work also reports the first achievement of Mg-free III-nitride LEDs that can exhibit high electrical efficiency (80% at 20 A/cm2).

KW - AlN

KW - Deep-ultraviolet LED

KW - h-BN

KW - heterostructures

KW - nanowires

KW - p-type conduction

UR - http://www.scopus.com/inward/record.url?scp=85020705489&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.7b01068

DO - 10.1021/acs.nanolett.7b01068

M3 - Article

C2 - 28471682

AN - SCOPUS:85020705489

SN - 1530-6984

VL - 17

SP - 3738

EP - 3743

JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics

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