All-manganite tunnel junctions with interface-induced barrier magnetism

Z. Sefrioui; C. Visani; M. J. Calderón; K. March; C. Carrétéro; M. Walls; A. Rivera-Calzada; C. León; R. Lopez Anton; T. R. Charlton; F. A. Cuellar; E. Iborra; F. Ott; D. Imhoff; L. Brey; M. Bibes; J. Santamaria; A. Barthélémy

doi:10.1002/adma.201002067

All-manganite tunnel junctions with interface-induced barrier magnetism

Z. Sefrioui, C. Visani, M. J. Calderón, K. March, C. Carrétéro, M. Walls, A. Rivera-Calzada, C. León, R. Lopez Anton, T. R. Charlton, F. A. Cuellar, E. Iborra, F. Ott, D. Imhoff, L. Brey, M. Bibes, J. Santamaria, A. Barthélémy

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.

Original language	English
Pages (from-to)	5029-5034
Number of pages	6
Journal	Advanced Materials
Volume	22
Issue number	44
DOIs	https://doi.org/10.1002/adma.201002067
State	Published - Nov 24 2010
Externally published	Yes

Keywords

interfaces
manganites
spin-filtering
tunneling

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10.1002/adma.201002067

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Sefrioui, Z., Visani, C., Calderón, M. J., March, K., Carrétéro, C., Walls, M., Rivera-Calzada, A., León, C., Anton, R. L., Charlton, T. R., Cuellar, F. A., Iborra, E., Ott, F., Imhoff, D., Brey, L., Bibes, M., Santamaria, J., & Barthélémy, A. (2010). All-manganite tunnel junctions with interface-induced barrier magnetism. Advanced Materials, 22(44), 5029-5034. https://doi.org/10.1002/adma.201002067

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title = "All-manganite tunnel junctions with interface-induced barrier magnetism",

abstract = "In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.",

keywords = "interfaces, manganites, spin-filtering, tunneling",

author = "Z. Sefrioui and C. Visani and Calder{\'o}n, {M. J.} and K. March and C. Carr{\'e}t{\'e}ro and M. Walls and A. Rivera-Calzada and C. Le{\'o}n and Anton, {R. Lopez} and Charlton, {T. R.} and Cuellar, {F. A.} and E. Iborra and F. Ott and D. Imhoff and L. Brey and M. Bibes and J. Santamaria and A. Barth{\'e}l{\'e}my",

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Sefrioui, Z, Visani, C, Calderón, MJ, March, K, Carrétéro, C, Walls, M, Rivera-Calzada, A, León, C, Anton, RL, Charlton, TR, Cuellar, FA, Iborra, E, Ott, F, Imhoff, D, Brey, L, Bibes, M, Santamaria, J & Barthélémy, A 2010, 'All-manganite tunnel junctions with interface-induced barrier magnetism', Advanced Materials, vol. 22, no. 44, pp. 5029-5034. https://doi.org/10.1002/adma.201002067

TY - JOUR

T1 - All-manganite tunnel junctions with interface-induced barrier magnetism

AU - Sefrioui, Z.

AU - Visani, C.

AU - Calderón, M. J.

AU - March, K.

AU - Carrétéro, C.

AU - Walls, M.

AU - Rivera-Calzada, A.

AU - León, C.

AU - Anton, R. Lopez

AU - Charlton, T. R.

AU - Cuellar, F. A.

AU - Iborra, E.

AU - Ott, F.

AU - Imhoff, D.

AU - Brey, L.

AU - Bibes, M.

AU - Santamaria, J.

AU - Barthélémy, A.

PY - 2010/11/24

Y1 - 2010/11/24

N2 - In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.

AB - In epitaxial heterostructures combining strongly correlated manganese oxides with antiferromagnetic-insulator or half-metallic character, a large interfacial moment is found and used to produce a spin-filter-like behavior in all-manganite tunnel junctions. The results suggest that after playing a key role in exchange-bias for spin-valves, uncompensated moments at engineered antiferromagnetic interfaces represent a novel route for generating highly spin-polarized currents with antiferromagnets.

KW - interfaces

KW - manganites

KW - spin-filtering

KW - tunneling

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U2 - 10.1002/adma.201002067

DO - 10.1002/adma.201002067

M3 - Article

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SN - 0935-9648

VL - 22

SP - 5029

EP - 5034

JO - Advanced Materials

JF - Advanced Materials

IS - 44

ER -

All-manganite tunnel junctions with interface-induced barrier magnetism

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Keywords

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