AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

C. I. Huang; M. J. Paulus; C. A. Bozada; S. C. Dudley; K. R. Evans; C. E. Stutz; R. L. Jones; M. E. Cheney

doi:10.1063/1.98588

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

C. I. Huang, M. J. Paulus, C. A. Bozada, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones, M. E. Cheney

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114 Scopus citations

Abstract

We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a]] two-step" spacer layer incorporated in the devices studied which facilitated the growth of high material quality.

Original language	English
Pages (from-to)	121-123
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	2
DOIs	https://doi.org/10.1063/1.98588
State	Published - 1987
Externally published	Yes

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title = "AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio",

abstract = "We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a]] two-step{"} spacer layer incorporated in the devices studied which facilitated the growth of high material quality.",

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year = "1987",

doi = "10.1063/1.98588",

language = "English",

volume = "51",

pages = "121--123",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

AU - Huang, C. I.

AU - Paulus, M. J.

AU - Bozada, C. A.

AU - Dudley, S. C.

AU - Evans, K. R.

AU - Stutz, C. E.

AU - Jones, R. L.

AU - Cheney, M. E.

PY - 1987

Y1 - 1987

N2 - We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a]] two-step" spacer layer incorporated in the devices studied which facilitated the growth of high material quality.

AB - We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a]] two-step" spacer layer incorporated in the devices studied which facilitated the growth of high material quality.

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VL - 51

SP - 121

EP - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

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