Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3

R. Valdés Aguilar; L. Wu; A. V. Stier; L. S. Bilbro; M. Brahlek; N. Bansal; S. Oh; N. P. Armitage

doi:10.1063/1.4801911

Aging and reduced bulk conductance in thin films of the topological insulator Bi₂Se₃

R. Valdés Aguilar, L. Wu, A. V. Stier, L. S. Bilbro, M. Brahlek, N. Bansal, S. Oh, N. P. Armitage

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi₂Se ₃. We find (1) two contributions of mobile charge carriers to the THz conductivity immediately after growth and (2) the spectral weight of the smaller of these decays significantly over a period of several days as the film is exposed to ambient conditions, while the other remains relatively constant. We associate the former with a bulk response and the latter with the surface. The surface response exhibits the expected robustness of the carriers from 2D topological surface states. We find no evidence for a third spectral feature derived from topologically trivial surface states.

Original language	English
Article number	153702
Journal	Journal of Applied Physics
Volume	113
Issue number	15
DOIs	https://doi.org/10.1063/1.4801911
State	Published - Apr 2013
Externally published	Yes

Funding

This work was supported by DOE grant for the Institute of Quantum Matter at JHU DE-FG02-08ER46544 and by the Gordon and Betty Moore Foundation. The work at Rutgers was supported by IAMDN of Rutgers University, NSF DMR-0845464 and ONR N000140910749.

Access to Document

10.1063/1.4801911

Cite this

@article{e1375548dc45413b84ca1dabb2592499,

title = "Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3",

abstract = "We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi2Se 3. We find (1) two contributions of mobile charge carriers to the THz conductivity immediately after growth and (2) the spectral weight of the smaller of these decays significantly over a period of several days as the film is exposed to ambient conditions, while the other remains relatively constant. We associate the former with a bulk response and the latter with the surface. The surface response exhibits the expected robustness of the carriers from 2D topological surface states. We find no evidence for a third spectral feature derived from topologically trivial surface states.",

author = "{Vald{\'e}s Aguilar}, R. and L. Wu and Stier, {A. V.} and Bilbro, {L. S.} and M. Brahlek and N. Bansal and S. Oh and Armitage, {N. P.}",

year = "2013",

month = apr,

doi = "10.1063/1.4801911",

language = "English",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Aging and reduced bulk conductance in thin films of the topological insulator Bi2Se3

AU - Valdés Aguilar, R.

AU - Wu, L.

AU - Stier, A. V.

AU - Bilbro, L. S.

AU - Brahlek, M.

AU - Bansal, N.

AU - Oh, S.

AU - Armitage, N. P.

PY - 2013/4

Y1 - 2013/4

N2 - We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi2Se 3. We find (1) two contributions of mobile charge carriers to the THz conductivity immediately after growth and (2) the spectral weight of the smaller of these decays significantly over a period of several days as the film is exposed to ambient conditions, while the other remains relatively constant. We associate the former with a bulk response and the latter with the surface. The surface response exhibits the expected robustness of the carriers from 2D topological surface states. We find no evidence for a third spectral feature derived from topologically trivial surface states.

AB - We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi2Se 3. We find (1) two contributions of mobile charge carriers to the THz conductivity immediately after growth and (2) the spectral weight of the smaller of these decays significantly over a period of several days as the film is exposed to ambient conditions, while the other remains relatively constant. We associate the former with a bulk response and the latter with the surface. The surface response exhibits the expected robustness of the carriers from 2D topological surface states. We find no evidence for a third spectral feature derived from topologically trivial surface states.

UR - http://www.scopus.com/inward/record.url?scp=84880570008&partnerID=8YFLogxK

U2 - 10.1063/1.4801911

DO - 10.1063/1.4801911

M3 - Article

AN - SCOPUS:84880570008

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 15

M1 - 153702

ER -

Aging and reduced bulk conductance in thin films of the topological insulator Bi₂Se₃

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this