Advancing microelectronics through nanoscale science: A perspective on needs and opportunities from the nanoscale science research centers

  • Adelaide Bradicich
  • , Christopher R. Allemang
  • , Sadhvikas Addamane
  • , Stephen D. House
  • , Aiping Chen
  • , Jinkyoung Yoo
  • , Ezra Bussmann
  • , Christopher M. Smyth
  • , Petro Maksymovych
  • , Marti Checa
  • , Sabine Neumayer
  • , Ondrej Dyck
  • , Jianguo Wen
  • , Luca Basso
  • , Pauli Kehayias
  • , Andy M. Mounce
  • , Chloe F. Doiron
  • , Michael Thompson Pettes
  • , Nan Li
  • , Luke Yates
  • Amun Jarzembski, C. Thomas Harris, Chang Yong Nam, Michael Titze, Lisa Hackett, Akshay Wali, Anirudha V. Sumant, Prasad Iyer, Wei Pan, Chris Jozwiak, Ricardo Ruiz, Remi Dingreville, Jeffrey S. Nelson, Tzu Ming Lu

Research output: Contribution to journalReview articlepeer-review

2 Scopus citations

Abstract

Microelectronics are the cornerstone of the modern world, enhancing our daily lives by providing services such as communications and datacenters. These resources are accessible thanks to the continual pursuit of a deeper understanding of the chemical and physical phenomena underlying the materials synthesis approaches and fabrication processes used to create microelectronic components and subsequently the components' responses to electrical, optical, and other stimuli that are utilized within microelectronic systems. Today, further development of microelectronics requires multidisciplinary expertise across scientific disciplines and fields of study—synthesis, materials characterization, nanoscale fabrication, and performance characterization—with focus placed on comprehending the nanoscale forms and features of microelectronic components. The Nanoscale Science Research Centers (NSRCs) are Department of Energy, Office of Science user facilities that support the international scientific community in advancing nanoscale science and technology. As a key component of the U.S. Government's National Nanotechnology Initiative, the NSRCs enable transformative discoveries by providing world-class facilities, expertise, and collaborative opportunities. In this perspective, we showcase a non-exhaustive cross-section of the capabilities housed at and developed by the NSRCs and their user communities to address fundamental synthesis, metrology, fabrication, and performance considerations toward advancing the development of new microelectronics. Finally, we provide a timely outlook on the next major areas of necessary development in nanoscale sciences to continue the innovation of microelectronics into the next generation.

Original languageEnglish
Article number041308
JournalApplied Physics Reviews
Volume12
Issue number4
DOIs
StatePublished - Dec 1 2025

Funding

This work was supported in part at the Center for Integrated Nanotechnologies (CINT—Sandia National Laboratories and Los Alamos National Laboratory), the Center for Nanophase Materials Sciences (CNMS—Oak Ridge National Laboratory), the Center for Nanoscale Materials (CNM—Argonne National Laboratory), the Molecular Foundry (TMF—Lawrence Berkeley National Laboratory), the Advanced Light Source (located at Lawrence Berkeley National Laboratory), the Center for Functional Nanomaterials (CFN—Brookhaven National Laboratory), U.S. Department of Energy Office of Science User Facilities, and the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES). Work performed at U.S. DOE Office of Science User Facilities at Argonne National Laboratory, Lawrence Berkeley National Laboratory, and Brookhaven National Laboratory was supported by the U.S. DOE, Office of Science, BES, under Contracts DE-AC02-06CH11357, DE-AC02-05CH11231, and DE-SC0012704. The research associated with the results presented in and has been supported by funding through the DOE, Basic Energy Sciences, and access to these capabilities made available to the public through the CNMS user center at ORNL. CFD acknowledges support from the U.S. DOE, Office of Science, BES, Division of Materials Sciences and Engineering (BES 20-017574). This work was supported in part by the U.S. DOE, Office of Science, BES Microelectronics Research Center, by the LDRD program at SNL, and by Clemson University. This manuscript has been authored, in part, by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the U.S. DOE. The capabilities that have been described in the papers authored by Dyck have been financially supported by the U.S. DOE, Office of Science, BES, Materials Sciences and Engineering Division. This work was supported in part by the Nano-Scale Research Center for Heterogeneous Integration Platforms (NSR-CHIP) project, authorized by the Micro Act, passed in the CHIPS and Science Act of 2022. Los Alamos National Laboratory, an affirmative action equal opportunity employer, is managed by Triad National Security, LLC, for the U.S. DOE's NNSA, under contract 89233218CNA000001. Sandia National Laboratories (SNL) is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE's National Nuclear Security Administration under contract DE-NA-0003525. This article has been authored by an employee of the National Technology & Engineering Solutions of Sandia, LLC, under Contract No. DE-NA-0003525 with the U.S. DOE. The employee owns all right, title, and interest in and to the article and is solely responsible for its contents. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this article or allow others to do so, for United States Government purposes. The DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan https://www.energy.gov/downloads/doe-public-access-plan . This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. DOE or the United States Government.

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