Advances of the development of a ferroelectric field-effect transistor on Ge(001)

Patrick Ponath; Agham B. Posadas; Yuan Ren; Xiaoyu Wu; Keji Lai; Alex Demkov; Michael Schmidt; Ray Duffy; Paul Hurley; Jian Wang; Chadwin Young; Rama K. Vasudevan; M. Baris Okatan; S. Jesse; Sergei V. Kalinin

doi:10.1109/ICICDT.2017.7993524

Advances of the development of a ferroelectric field-effect transistor on Ge(001)

Patrick Ponath, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Keji Lai, Alex Demkov, Michael Schmidt, Ray Duffy, Paul Hurley, Jian Wang, Chadwin Young, Rama K. Vasudevan, M. Baris Okatan, S. Jesse, Sergei V. Kalinin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO₃ on Ge. Recent results of patterning BaTiO₃ for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.

Original language	English
Title of host publication	2017 IEEE International Conference on IC Design and Technology, ICICDT 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509045020
DOIs	https://doi.org/10.1109/ICICDT.2017.7993524
State	Published - Jul 26 2017
Event	2017 IEEE International Conference on IC Design and Technology, ICICDT 2017 - Austin, United States Duration: May 23 2017 → May 25 2017

Publication series

Name	2017 IEEE International Conference on IC Design and Technology, ICICDT 2017

Conference

Conference	2017 IEEE International Conference on IC Design and Technology, ICICDT 2017
Country/Territory	United States
City	Austin
Period	05/23/17 → 05/25/17

Funding

The work is supported by the Air Force Office of Scientific Research under grants FA9550-14-1-0090 and FA9550-12-10494.

Funders	Funder number
Air Force Office of Scientific Research	FA9550-12-10494, FA9550-14-1-0090

Keywords

BaTiO
Ferroelectric field-effect transistor
Ferroelectricity
Germanium
Non-volatile memory device

Access to Document

10.1109/ICICDT.2017.7993524

Cite this

Ponath, P., Posadas, A. B., Ren, Y., Wu, X., Lai, K., Demkov, A., Schmidt, M., Duffy, R., Hurley, P., Wang, J., Young, C., Vasudevan, R. K., Okatan, M. B., Jesse, S., & Kalinin, S. V. (2017). Advances of the development of a ferroelectric field-effect transistor on Ge(001). In 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017 Article 7993524 (2017 IEEE International Conference on IC Design and Technology, ICICDT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2017.7993524

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title = "Advances of the development of a ferroelectric field-effect transistor on Ge(001)",

abstract = "Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.",

keywords = "BaTiO, Ferroelectric field-effect transistor, Ferroelectricity, Germanium, Non-volatile memory device",

author = "Patrick Ponath and Posadas, {Agham B.} and Yuan Ren and Xiaoyu Wu and Keji Lai and Alex Demkov and Michael Schmidt and Ray Duffy and Paul Hurley and Jian Wang and Chadwin Young and Vasudevan, {Rama K.} and Okatan, {M. Baris} and S. Jesse and Kalinin, {Sergei V.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017 ; Conference date: 23-05-2017 Through 25-05-2017",

year = "2017",

month = jul,

day = "26",

doi = "10.1109/ICICDT.2017.7993524",

language = "English",

series = "2017 IEEE International Conference on IC Design and Technology, ICICDT 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 IEEE International Conference on IC Design and Technology, ICICDT 2017",

}

Ponath, P, Posadas, AB, Ren, Y, Wu, X, Lai, K, Demkov, A, Schmidt, M, Duffy, R, Hurley, P, Wang, J, Young, C, Vasudevan, RK, Okatan, MB, Jesse, S & Kalinin, SV 2017, Advances of the development of a ferroelectric field-effect transistor on Ge(001). in 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017., 7993524, 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017, Institute of Electrical and Electronics Engineers Inc., 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017, Austin, United States, 05/23/17. https://doi.org/10.1109/ICICDT.2017.7993524

Advances of the development of a ferroelectric field-effect transistor on Ge(001). / Ponath, Patrick; Posadas, Agham B.; Ren, Yuan et al.
2017 IEEE International Conference on IC Design and Technology, ICICDT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7993524 (2017 IEEE International Conference on IC Design and Technology, ICICDT 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Advances of the development of a ferroelectric field-effect transistor on Ge(001)

AU - Ponath, Patrick

AU - Posadas, Agham B.

AU - Ren, Yuan

AU - Wu, Xiaoyu

AU - Lai, Keji

AU - Demkov, Alex

AU - Schmidt, Michael

AU - Duffy, Ray

AU - Hurley, Paul

AU - Wang, Jian

AU - Young, Chadwin

AU - Vasudevan, Rama K.

AU - Okatan, M. Baris

AU - Jesse, S.

AU - Kalinin, Sergei V.

PY - 2017/7/26

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N2 - Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.

AB - Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.

KW - BaTiO

KW - Ferroelectric field-effect transistor

KW - Ferroelectricity

KW - Germanium

KW - Non-volatile memory device

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M3 - Conference contribution

AN - SCOPUS:85028568444

T3 - 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017

BT - 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017

Y2 - 23 May 2017 through 25 May 2017

ER -

Ponath P, Posadas AB, Ren Y, Wu X, Lai K, Demkov A et al. Advances of the development of a ferroelectric field-effect transistor on Ge(001). In 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7993524. (2017 IEEE International Conference on IC Design and Technology, ICICDT 2017). doi: 10.1109/ICICDT.2017.7993524

Advances of the development of a ferroelectric field-effect transistor on Ge(001)

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