Adsorption of Sb on Ge(110) studied by photoemission and scanning tunneling microscopy

F. M. Leibsle, E. S. Hirschorn, A. Samsavar, T. Miller, T. C. Chiang

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Abstract

The Ge(110) surface shows two possible reconstructions: the 16 structure and the c(8×10). The adsorption of Sb on these surfaces at elevated substrate temperatures shows saturation behaviors. At 200 mDC, the Sb saturation occurs at one-monolayer (ML) coverage, and the resulting surface exhibits a (1×1) diffraction pattern. Photoemission studies of the core levels suggest that this (1×1) surface is close to being an ideal Sb-terminated surface. This is consistent with direct observations by scanning tunneling microscopy (STM). At a higher substrate temperature of 400° C, Sb saturation of the surface results in a (3×2) diffraction pattern. An Sb coverage of 2/3 ML on this surface is determined from core-level-photoemission and Auger results. STM images for these surfaces are presented and discussed.

Original languageEnglish
Pages (from-to)8115-8120
Number of pages6
JournalPhysical Review B
Volume44
Issue number15
DOIs
StatePublished - 1991
Externally publishedYes

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