Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission

D. H. Rich; F. M. Leibsle; A. Samsavar; E. S. Hirschorn; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.39.12758

Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission

D. H. Rich, F. M. Leibsle, A. Samsavar, E. S. Hirschorn, T. Miller, T. C. Chiang

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70 Scopus citations

Abstract

Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.

Original language	English
Pages (from-to)	12758-12763
Number of pages	6
Journal	Physical Review B
Volume	39
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.39.12758
State	Published - 1989
Externally published	Yes

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title = "Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission",

abstract = "Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.",

author = "Rich, {D. H.} and Leibsle, {F. M.} and A. Samsavar and Hirschorn, {E. S.} and T. Miller and Chiang, {T. C.}",

year = "1989",

doi = "10.1103/PhysRevB.39.12758",

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T1 - Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission

AU - Rich, D. H.

AU - Leibsle, F. M.

AU - Samsavar, A.

AU - Hirschorn, E. S.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1989

Y1 - 1989

N2 - Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.

AB - Scanning tunneling microscopy (STM) and synchrotron photoemission were used to analyze the Sb/Si(001) interface formation for submonolayer and saturation coverages. The surface-shifted core-level component observed in photoemission for Si(001)-(2×1) was suppressed with the adsorption of Sb. Constant-current STM images which were taken for different sample bias conditions show changes in the spatial distribution of the occupied and unoccupied states derived from the Si-dimer dangling bonds upon Sb adsorption. These observations are interpreted in terms of the formation of Sb-Si bonds and the resulting modifications in the surface electronic properties.

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DO - 10.1103/PhysRevB.39.12758

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VL - 39

SP - 12758

EP - 12763

JO - Physical Review B

JF - Physical Review B

IS - 17

ER -

Adsorption and interaction of Sb on Si(001) studied by scanning tunneling microscopy and core-level photoemission

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