Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes

Vladimir I. Merkulov; Douglas H. Lowndes; L. R. Baylor; A. A. Puretzky; G. E. Jellison; D. B. Geohegan; M. J. Paulus; C. E. Thomas; M. L. Simpson; J. A. Moore; E. Voelkl

Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes

Vladimir I. Merkulov
, Douglas H. Lowndes
, L. R. Baylor
, A. A. Puretzky
, G. E. Jellison
, D. B. Geohegan
, M. J. Paulus
, C. E. Thomas
, M. L. Simpson
, J. A. Moore
, E. Voelkl

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

A novel addressable field emission array (AFEA) for use in new deep sub-micron electron-beam lithography system is developed. The device consists of a low electron affinity coating deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of massively parallel but independent electron beams. The CMOS circuitry will address and control cathodes, providing dynamic control of the e-beam matrix.

Original language	English
Pages	178-179
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998

Conference

Conference	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
City	Asheville, NC, USA
Period	07/19/98 → 07/24/98

Cite this

Merkulov, V. I., Lowndes, D. H., Baylor, L. R., Puretzky, A. A., Jellison, G. E., Geohegan, D. B., Paulus, M. J., Thomas, C. E., Simpson, M. L., Moore, J. A., & Voelkl, E. (1998). Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes. 178-179. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA.

@conference{053747cc8b8b49f4b68a0748eb365bf5,

title = "Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes",

abstract = "A novel addressable field emission array (AFEA) for use in new deep sub-micron electron-beam lithography system is developed. The device consists of a low electron affinity coating deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of massively parallel but independent electron beams. The CMOS circuitry will address and control cathodes, providing dynamic control of the e-beam matrix.",

author = "Merkulov, \{Vladimir I.\} and Lowndes, \{Douglas H.\} and Baylor, \{L. R.\} and Puretzky, \{A. A.\} and Jellison, \{G. E.\} and Geohegan, \{D. B.\} and Paulus, \{M. J.\} and Thomas, \{C. E.\} and Simpson, \{M. L.\} and Moore, \{J. A.\} and E. Voelkl",

year = "1998",

language = "English",

pages = "178--179",

note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

Merkulov, VI, Lowndes, DH, Baylor, LR , Puretzky, AA, Jellison, GE, Geohegan, DB, Paulus, MJ, Thomas, CE, Simpson, ML, Moore, JA & Voelkl, E 1998, 'Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes', Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 07/19/98 - 07/24/98 pp. 178-179.

Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes. / Merkulov, Vladimir I.; Lowndes, Douglas H.; Baylor, L. R. et al.
1998. 178-179 Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes

AU - Merkulov, Vladimir I.

AU - Lowndes, Douglas H.

AU - Baylor, L. R.

AU - Puretzky, A. A.

AU - Jellison, G. E.

AU - Geohegan, D. B.

AU - Paulus, M. J.

AU - Thomas, C. E.

AU - Simpson, M. L.

AU - Moore, J. A.

AU - Voelkl, E.

PY - 1998

Y1 - 1998

N2 - A novel addressable field emission array (AFEA) for use in new deep sub-micron electron-beam lithography system is developed. The device consists of a low electron affinity coating deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of massively parallel but independent electron beams. The CMOS circuitry will address and control cathodes, providing dynamic control of the e-beam matrix.

AB - A novel addressable field emission array (AFEA) for use in new deep sub-micron electron-beam lithography system is developed. The device consists of a low electron affinity coating deposited on aluminum biasing pads controlled by CMOS circuitry. Each cathode is individually addressable, providing a matrix of massively parallel but independent electron beams. The CMOS circuitry will address and control cathodes, providing dynamic control of the e-beam matrix.

UR - https://www.scopus.com/pages/publications/0032320211

M3 - Paper

AN - SCOPUS:0032320211

SP - 178

EP - 179

T2 - Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC

Y2 - 19 July 1998 through 24 July 1998

ER -

Addressable field emission array for E-beam lithography using planar, pulsed-laser deposited amorphous diamond cathodes

Abstract

Conference

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