Addressable amorphous diamond field emission array for E-beam lithography

M. J. Paulus; C. E. Thomas; M. L. Simpson; J. A. Moore; L. R. Baylor; D. H. Lowndes; D. B. Geohegan; G. E. Jellison; V. I. Merkulov; A. A. Puretzky; E. Voelkl; J. Walter; F. W. Garber

Addressable amorphous diamond field emission array for E-beam lithography

M. J. Paulus, C. E. Thomas, M. L. Simpson, J. A. Moore, L. R. Baylor, D. H. Lowndes, D. B. Geohegan, G. E. Jellison, V. I. Merkulov, A. A. Puretzky, E. Voelkl, J. Walter, F. W. Garber

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

A novel addressable field emission array has been developed for use in a new deep submicron electron-beam lithography system. The device consists of a two-dimensional array of miniature amorphous diamond cathodes deposited on aluminum biasing pads controlled by CMOS circuitry. The prototype device was characterized and was found to produce measurable electron fluxes at voltages below 5V. The geometrical enhancement factor evaluated from Fowler-Nordheim plots is approximately 1100, suggesting electrons are emitted locally from spherically sp³ clusters.

Original language	English
Pages	122-123
Number of pages	2
State	Published - 1998
Event	Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA Duration: Jun 22 1998 → Jun 24 1998

Conference

Conference	Proceedings of the 1998 56th Annual Device Research Conference
City	Charlottesville, VA, USA
Period	06/22/98 → 06/24/98

Cite this

Paulus, M. J., Thomas, C. E., Simpson, M. L., Moore, J. A., Baylor, L. R., Lowndes, D. H., Geohegan, D. B., Jellison, G. E., Merkulov, V. I., Puretzky, A. A., Voelkl, E., Walter, J., & Garber, F. W. (1998). Addressable amorphous diamond field emission array for E-beam lithography. 122-123. Paper presented at Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA.

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title = "Addressable amorphous diamond field emission array for E-beam lithography",

abstract = "A novel addressable field emission array has been developed for use in a new deep submicron electron-beam lithography system. The device consists of a two-dimensional array of miniature amorphous diamond cathodes deposited on aluminum biasing pads controlled by CMOS circuitry. The prototype device was characterized and was found to produce measurable electron fluxes at voltages below 5V. The geometrical enhancement factor evaluated from Fowler-Nordheim plots is approximately 1100, suggesting electrons are emitted locally from spherically sp3 clusters.",

author = "Paulus, {M. J.} and Thomas, {C. E.} and Simpson, {M. L.} and Moore, {J. A.} and Baylor, {L. R.} and Lowndes, {D. H.} and Geohegan, {D. B.} and Jellison, {G. E.} and Merkulov, {V. I.} and Puretzky, {A. A.} and E. Voelkl and J. Walter and Garber, {F. W.}",

year = "1998",

language = "English",

pages = "122--123",

note = "Proceedings of the 1998 56th Annual Device Research Conference ; Conference date: 22-06-1998 Through 24-06-1998",

}

Paulus, MJ, Thomas, CE, Simpson, ML, Moore, JA, Baylor, LR, Lowndes, DH, Geohegan, DB, Jellison, GE, Merkulov, VI, Puretzky, AA, Voelkl, E, Walter, J & Garber, FW 1998, 'Addressable amorphous diamond field emission array for E-beam lithography', Paper presented at Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, 06/22/98 - 06/24/98 pp. 122-123.

TY - CONF

T1 - Addressable amorphous diamond field emission array for E-beam lithography

AU - Paulus, M. J.

AU - Thomas, C. E.

AU - Simpson, M. L.

AU - Moore, J. A.

AU - Baylor, L. R.

AU - Lowndes, D. H.

AU - Geohegan, D. B.

AU - Jellison, G. E.

AU - Merkulov, V. I.

AU - Puretzky, A. A.

AU - Voelkl, E.

AU - Walter, J.

AU - Garber, F. W.

PY - 1998

Y1 - 1998

N2 - A novel addressable field emission array has been developed for use in a new deep submicron electron-beam lithography system. The device consists of a two-dimensional array of miniature amorphous diamond cathodes deposited on aluminum biasing pads controlled by CMOS circuitry. The prototype device was characterized and was found to produce measurable electron fluxes at voltages below 5V. The geometrical enhancement factor evaluated from Fowler-Nordheim plots is approximately 1100, suggesting electrons are emitted locally from spherically sp3 clusters.

AB - A novel addressable field emission array has been developed for use in a new deep submicron electron-beam lithography system. The device consists of a two-dimensional array of miniature amorphous diamond cathodes deposited on aluminum biasing pads controlled by CMOS circuitry. The prototype device was characterized and was found to produce measurable electron fluxes at voltages below 5V. The geometrical enhancement factor evaluated from Fowler-Nordheim plots is approximately 1100, suggesting electrons are emitted locally from spherically sp3 clusters.

UR - http://www.scopus.com/inward/record.url?scp=0032311834&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032311834

SP - 122

EP - 123

T2 - Proceedings of the 1998 56th Annual Device Research Conference

Y2 - 22 June 1998 through 24 June 1998

ER -

Addressable amorphous diamond field emission array for E-beam lithography

Abstract

Conference

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