Active control of magnetoresistance of organic spin valves using ferroelectricity

Dali Sun; Mei Fang; Xiaoshan Xu; Lu Jiang; Hangwen Guo; Yanmei Wang; Wenting Yang; Lifeng Yin; Paul C. Snijders; T. Z. Ward; Zheng Gai; X. G. Zhang; Ho Nyung Lee; Jian Shen

doi:10.1038/ncomms5396

Active control of magnetoresistance of organic spin valves using ferroelectricity

Dali Sun, Mei Fang, Xiaoshan Xu, Lu Jiang, Hangwen Guo, Yanmei Wang, Wenting Yang, Lifeng Yin, Paul C. Snijders, T. Z. Ward, Zheng Gai, X. G. Zhang, Ho Nyung Lee, Jian Shen

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.

Original language	English
Article number	4396
Journal	Nature Communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms5396
State	Published - Jul 10 2014

Funding

This study was supported by the National Basic Research Program of China (973 Program) under the grant numbers 2011CB921800, 2013CB932901 and 2014CB921104; National Natural Science Foundation of China (91121002 and 11274071); Shanghai Municipal Natural Science Foundation (11ZR1402600); China Postdoctoral Science Foundation (2013M540321); the Wuhan National High Magnetic Field Center (WHMFCKF2011008) (M.F., L.Y., Y.W., W.Y. and J.S.). We also acknowledge the funding support of U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division (D.S., X.X., L.J., H.N.L., P.C.S. and T.Z.W.) and the U.S. Department of Energy, Basic Energy Sciences, Scientific User Facilities Division (X.G.Z. and Z.G.), the US DOE grant DE-SC0002136 (H.G. and J.S.).

Funders	Funder number
U.S. Department of Energy	DE-SC0002136
Basic Energy Sciences
Natural Science Foundation of Shanghai	11ZR1402600
Division of Materials Sciences and Engineering
National Natural Science Foundation of China	91121002, 11274071
China Postdoctoral Science Foundation	2013M540321
High Magnetic Field Laboratory, Chinese Academy of Sciences	WHMFCKF2011008
National Key Research and Development Program of China	2014CB921104, 2013CB932901, 2011CB921800

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abstract = "Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.",

author = "Dali Sun and Mei Fang and Xiaoshan Xu and Lu Jiang and Hangwen Guo and Yanmei Wang and Wenting Yang and Lifeng Yin and Snijders, {Paul C.} and Ward, {T. Z.} and Zheng Gai and Zhang, {X. G.} and Lee, {Ho Nyung} and Jian Shen",

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T1 - Active control of magnetoresistance of organic spin valves using ferroelectricity

AU - Sun, Dali

AU - Fang, Mei

AU - Xu, Xiaoshan

AU - Jiang, Lu

AU - Guo, Hangwen

AU - Wang, Yanmei

AU - Yang, Wenting

AU - Yin, Lifeng

AU - Snijders, Paul C.

AU - Ward, T. Z.

AU - Gai, Zheng

AU - Zhang, X. G.

AU - Lee, Ho Nyung

AU - Shen, Jian

PY - 2014/7/10

Y1 - 2014/7/10

N2 - Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.

AB - Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.

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Active control of magnetoresistance of organic spin valves using ferroelectricity

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