Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs
- Guo Xing Duan
- , Jordan Hatchtel
- , Xiao Shen
- , En Xia Zhang
- , Cher Xuan Zhang
- , Blair R. Tuttle
- , Daniel M. Fleetwood
- , Ronald D. Schrimpf
- , Robert A. Reed
- , Jacopo Franco
- , Dimitri Linten
- , Jerome Mitard
- , Liesbeth Witters
- , Nadine Collaert
- , Matthew F. Chisholm
- , Sokrates T. Pantelides
Research output: Contribution to journal › Article › peer-review
8
Scopus
citations