Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs

Guo Xing Duan, Jordan Hatchtel, Xiao Shen, En Xia Zhang, Cher Xuan Zhang, Blair R. Tuttle, Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Jacopo Franco, Dimitri Linten, Jerome Mitard, Liesbeth Witters, Nadine Collaert, Matthew F. Chisholm, Sokrates T. Pantelides

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

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