Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics

Jongmin Choi; Jea Woong Jo; F. Pelayo García de Arquer; Yong Biao Zhao; Bin Sun; Junghwan Kim; Min Jae Choi; Se Woong Baek; Andrew H. Proppe; Ali Seifitokaldani; Dae Hyun Nam; Peicheng Li; Olivier Ouellette; Younghoon Kim; Oleksandr Voznyy; Sjoerd Hoogland; Shana O. Kelley; Zheng Hong Lu; Edward H. Sargent

doi:10.1002/adma.201801720

Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics

Jongmin Choi, Jea Woong Jo, F. Pelayo García de Arquer, Yong Biao Zhao, Bin Sun, Junghwan Kim, Min Jae Choi, Se Woong Baek, Andrew H. Proppe, Ali Seifitokaldani, Dae Hyun Nam, Peicheng Li, Olivier Ouellette, Younghoon Kim, Oleksandr Voznyy, Sjoerd Hoogland, Shana O. Kelley, Zheng Hong Lu, Edward H. Sargent

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

Photovoltaic (PV) materials such as perovskites and silicon are generally unabsorptive at wavelengths longer than 1100 nm, leaving a significant portion of the IR solar spectrum unharvested. Small-bandgap colloidal quantum dots (CQDs) are a promising platform to offer tandem complementary IR PV solutions. Today, the best performing CQD PVs use zinc oxide (ZnO) as an electron-transport layer. However, these electrodes require ultraviolet (UV)-light activation to overcome the low carrier density of ZnO, precluding the realization of CQD tandem photovoltaics. Here, a new sol–gel UV-free electrode based on Al/Cl hybrid doping of ZnO (CAZO) is developed. Al heterovalent doping provides a strong n-type character while Cl surface passivation leads to a more favorable band alignment for electron extraction. CAZO CQD IR solar cell devices exhibit, at wavelengths beyond the Si bandgap, an external quantum efficiency of 73%, leading to an additional 0.92% IR power conversion efficiency without UV activation. Conventional ZnO devices, on the other hand, add fewer than 0.01 power points at these operating conditions.

Original language	English
Article number	1801720
Journal	Advanced Materials
Volume	30
Issue number	29
DOIs	https://doi.org/10.1002/adma.201801720
State	Published - Jul 19 2018
Externally published	Yes

Keywords

Infrared
ZnO
conductivity
doping
quantum dot solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/adma.201801720

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Choi, J., Jo, J. W., de Arquer, F. P. G., Zhao, Y. B., Sun, B., Kim, J., Choi, M. J., Baek, S. W., Proppe, A. H., Seifitokaldani, A., Nam, D. H., Li, P., Ouellette, O., Kim, Y., Voznyy, O., Hoogland, S., Kelley, S. O., Lu, Z. H., & Sargent, E. H. (2018). Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics. Advanced Materials, 30(29), Article 1801720. https://doi.org/10.1002/adma.201801720

@article{802bf7a335e54920802c52fd3e67daf2,

title = "Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics",

abstract = "Photovoltaic (PV) materials such as perovskites and silicon are generally unabsorptive at wavelengths longer than 1100 nm, leaving a significant portion of the IR solar spectrum unharvested. Small-bandgap colloidal quantum dots (CQDs) are a promising platform to offer tandem complementary IR PV solutions. Today, the best performing CQD PVs use zinc oxide (ZnO) as an electron-transport layer. However, these electrodes require ultraviolet (UV)-light activation to overcome the low carrier density of ZnO, precluding the realization of CQD tandem photovoltaics. Here, a new sol–gel UV-free electrode based on Al/Cl hybrid doping of ZnO (CAZO) is developed. Al heterovalent doping provides a strong n-type character while Cl surface passivation leads to a more favorable band alignment for electron extraction. CAZO CQD IR solar cell devices exhibit, at wavelengths beyond the Si bandgap, an external quantum efficiency of 73%, leading to an additional 0.92% IR power conversion efficiency without UV activation. Conventional ZnO devices, on the other hand, add fewer than 0.01 power points at these operating conditions.",

keywords = "Infrared, ZnO, conductivity, doping, quantum dot solar cells",

author = "Jongmin Choi and Jo, {Jea Woong} and {de Arquer}, {F. Pelayo Garc{\'i}a} and Zhao, {Yong Biao} and Bin Sun and Junghwan Kim and Choi, {Min Jae} and Baek, {Se Woong} and Proppe, {Andrew H.} and Ali Seifitokaldani and Nam, {Dae Hyun} and Peicheng Li and Olivier Ouellette and Younghoon Kim and Oleksandr Voznyy and Sjoerd Hoogland and Kelley, {Shana O.} and Lu, {Zheng Hong} and Sargent, {Edward H.}",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = jul,

day = "19",

doi = "10.1002/adma.201801720",

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volume = "30",

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Choi, J, Jo, JW, de Arquer, FPG, Zhao, YB, Sun, B, Kim, J, Choi, MJ, Baek, SW, Proppe, AH, Seifitokaldani, A, Nam, DH, Li, P, Ouellette, O, Kim, Y, Voznyy, O, Hoogland, S, Kelley, SO, Lu, ZH & Sargent, EH 2018, 'Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics', Advanced Materials, vol. 30, no. 29, 1801720. https://doi.org/10.1002/adma.201801720

TY - JOUR

T1 - Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics

AU - Choi, Jongmin

AU - Jo, Jea Woong

AU - de Arquer, F. Pelayo García

AU - Zhao, Yong Biao

AU - Sun, Bin

AU - Kim, Junghwan

AU - Choi, Min Jae

AU - Baek, Se Woong

AU - Proppe, Andrew H.

AU - Seifitokaldani, Ali

AU - Nam, Dae Hyun

AU - Li, Peicheng

AU - Ouellette, Olivier

AU - Kim, Younghoon

AU - Voznyy, Oleksandr

AU - Hoogland, Sjoerd

AU - Kelley, Shana O.

AU - Lu, Zheng Hong

AU - Sargent, Edward H.

PY - 2018/7/19

Y1 - 2018/7/19

N2 - Photovoltaic (PV) materials such as perovskites and silicon are generally unabsorptive at wavelengths longer than 1100 nm, leaving a significant portion of the IR solar spectrum unharvested. Small-bandgap colloidal quantum dots (CQDs) are a promising platform to offer tandem complementary IR PV solutions. Today, the best performing CQD PVs use zinc oxide (ZnO) as an electron-transport layer. However, these electrodes require ultraviolet (UV)-light activation to overcome the low carrier density of ZnO, precluding the realization of CQD tandem photovoltaics. Here, a new sol–gel UV-free electrode based on Al/Cl hybrid doping of ZnO (CAZO) is developed. Al heterovalent doping provides a strong n-type character while Cl surface passivation leads to a more favorable band alignment for electron extraction. CAZO CQD IR solar cell devices exhibit, at wavelengths beyond the Si bandgap, an external quantum efficiency of 73%, leading to an additional 0.92% IR power conversion efficiency without UV activation. Conventional ZnO devices, on the other hand, add fewer than 0.01 power points at these operating conditions.

AB - Photovoltaic (PV) materials such as perovskites and silicon are generally unabsorptive at wavelengths longer than 1100 nm, leaving a significant portion of the IR solar spectrum unharvested. Small-bandgap colloidal quantum dots (CQDs) are a promising platform to offer tandem complementary IR PV solutions. Today, the best performing CQD PVs use zinc oxide (ZnO) as an electron-transport layer. However, these electrodes require ultraviolet (UV)-light activation to overcome the low carrier density of ZnO, precluding the realization of CQD tandem photovoltaics. Here, a new sol–gel UV-free electrode based on Al/Cl hybrid doping of ZnO (CAZO) is developed. Al heterovalent doping provides a strong n-type character while Cl surface passivation leads to a more favorable band alignment for electron extraction. CAZO CQD IR solar cell devices exhibit, at wavelengths beyond the Si bandgap, an external quantum efficiency of 73%, leading to an additional 0.92% IR power conversion efficiency without UV activation. Conventional ZnO devices, on the other hand, add fewer than 0.01 power points at these operating conditions.

KW - Infrared

KW - ZnO

KW - conductivity

KW - doping

KW - quantum dot solar cells

UR - http://www.scopus.com/inward/record.url?scp=85047662116&partnerID=8YFLogxK

U2 - 10.1002/adma.201801720

DO - 10.1002/adma.201801720

M3 - Article

AN - SCOPUS:85047662116

SN - 0935-9648

VL - 30

JO - Advanced Materials

JF - Advanced Materials

IS - 29

M1 - 1801720

ER -

Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics

Abstract

Keywords

UN SDGs

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