@inproceedings{9ac9de3f9972420e9ddd3331a5e97e6f,
title = "Accumulation of implantation damage in MEV implanted diamond crystals",
abstract = "Single crystal, type IIa natural diamond substrates have been implanted with 4 MeV carbon ions to doses ranging from 0.5-130×1016 cm-2. The accumulation of implantation damage is studied by Raman and RBS/channeling. Similar effects are observed for crystals of [100], [110], and [111] orientation but with different rates of damage accumulation. With increasing implantation damage, the triply degenerate Raman mode at 1332 cm-1 broadens and shifts down to around 1300 cm-1. This corresponds to a peak in the one-phonon density of states as predicted for Raman from an amorphous sp3 network. There is no evidence for the existence of sp2 carbon in the implanted area. Additional non-graphite Raman peaks appear at 1451, 1494, and 1635 cm-1. At the higher doses, the 1332 cm-1 Raman mode is no longer observed; however, RBS/channeling still shows the surface region to be crystalline and it is possible to grow high quality homoepitaxial diamond films on these substrates.",
author = "Hunn, {John D.} and Eithrow, {S. P.} and Clausing, {R. E.} and L. Heatherly and J. Bentley and Hembree, {D. M.} and Parikh, {N. R.}",
year = "1994",
language = "English",
isbn = "1558992154",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "45--50",
editor = "Garito, {Anthony F.} and Jen, {Alex K-Y.} and Lee, {Charles Y-C.} and Dalton, {Larry R.}",
booktitle = "Materials Synthesis and Processing Using Ion Beams",
note = "Proceedings of the MRS 1993 Fall Meeting ; Conference date: 29-11-1993 Through 03-12-1993",
}