Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure

J. P. McCandless; C. A. Gorsak; V. Protasenko; D. G. Schlom; Michael O. Thompson; H. G. Xing; D. Jena; H. P. Nair

doi:10.1063/5.0191280

Accumulation and removal of Si impurities on β-Ga₂O₃ arising from ambient air exposure

J. P. McCandless
, C. A. Gorsak
, V. Protasenko
, D. G. Schlom
, Michael O. Thompson
, H. G. Xing
, D. Jena
, H. P. Nair

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Here, we report that a source of Si impurities commonly observed on (010) β-Ga₂O₃ is from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid (HF) (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) β-Ga₂O₃ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment, the sample must be immediately put under vacuum, for the Si fully returns within 10 min of additional air exposure. Finally, we demonstrate that performing a 30 min HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent Ga₂O₃ growth.

Original language	English
Article number	111601
Journal	Applied Physics Letters
Volume	124
Issue number	11
DOIs	https://doi.org/10.1063/5.0191280
State	Published - Mar 11 2024
Externally published	Yes

Funding

This research was supported by the Air Force Research Laboratory-Cornell Center for Epitaxial Solutions (ACCESS), monitored by Dr. Ali Sayir (No. FA9550-18-1-0529). JPM acknowledges the support of a National Science Foundation Graduate Research Fellowship under Grant No. DGE-2139899. CAG acknowledges support from the National Defense Science and Engineering Graduate (NDSEG) Fellowship. This work uses the CCMR and CESI Shared Facilities partly sponsored by the NSF MRSEC program (No. DMR-1719875) and MRI No. DMR-1338010, and the Kavli Institute at Cornell (KIC). This research was supported by the Air Force Research Laboratory-Cornell Center for Epitaxial Solutions (ACCESS), monitored by Dr. Ali Sayir (No. FA9550-18-1-0529). JPM acknowledges the support of a National Science Foundation Graduate Research Fellowship under Grant No. DGE–2139899. CAG acknowledges support from the National Defense Science and Engineering Graduate (NDSEG) Fellowship. This work uses the CCMR and CESI Shared Facilities partly sponsored by the NSF MRSEC program (No. DMR-1719875) and MRI No. DMR-1338010, and the Kavli Institute at Cornell (KIC).

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10.1063/5.0191280

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abstract = "Here, we report that a source of Si impurities commonly observed on (010) β-Ga2O3 is from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid (HF) (49\%) treatment reduces the Si density by approximately 1 order of magnitude on (010) β-Ga2O3 surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment, the sample must be immediately put under vacuum, for the Si fully returns within 10 min of additional air exposure. Finally, we demonstrate that performing a 30 min HF (49\%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent Ga2O3 growth.",

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T1 - Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure

AU - McCandless, J. P.

AU - Gorsak, C. A.

AU - Protasenko, V.

AU - Schlom, D. G.

AU - Thompson, Michael O.

AU - Xing, H. G.

AU - Jena, D.

AU - Nair, H. P.

PY - 2024/3/11

Y1 - 2024/3/11

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AB - Here, we report that a source of Si impurities commonly observed on (010) β-Ga2O3 is from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid (HF) (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) β-Ga2O3 surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment, the sample must be immediately put under vacuum, for the Si fully returns within 10 min of additional air exposure. Finally, we demonstrate that performing a 30 min HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent Ga2O3 growth.

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Accumulation and removal of Si impurities on β-Ga₂O₃ arising from ambient air exposure

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