Accelerated aging of 808 nm high-power semiconductor laser diodes

Guo Guang Lu; Ge Tao Tao; Shun Yao; Yan Fang Sun; Xiao Nan Shan; Chao Wang; Yun Liu; Li Jun Wang

Accelerated aging of 808 nm high-power semiconductor laser diodes

Guo Guang Lu
, Ge Tao Tao
, Shun Yao
, Yan Fang Sun
, Xiao Nan Shan
, Chao Wang
, Yun Liu
, Li Jun Wang

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Accelerated aging tests were carried out under the conditions of constant current and high-temperatures for 808 nm high-power Al-free InGaAsP/GaAs lasers. Based on the mean lifetimes of the laser diodes at high-temperatures, the mean lifetimes of lasers at room temperature were extrapolated to be in excess of 30000 h. In addition, the catastrophic degradation modes and several methods to prevent this degradation mode are discussed.

Original language	English
Pages (from-to)	97-99
Number of pages	3
Journal	Bandaoti Guangdian/Semiconductor Optoelectronics
Volume	26
Issue number	2
State	Published - Apr 2005
Externally published	Yes

Keywords

Accelerated aging
Catastrophic degradation
High-power
Reliability
Semiconductor lasers

Cite this

@article{81da4196226747aabdc67c44229a399f,

title = "Accelerated aging of 808 nm high-power semiconductor laser diodes",

abstract = "Accelerated aging tests were carried out under the conditions of constant current and high-temperatures for 808 nm high-power Al-free InGaAsP/GaAs lasers. Based on the mean lifetimes of the laser diodes at high-temperatures, the mean lifetimes of lasers at room temperature were extrapolated to be in excess of 30000 h. In addition, the catastrophic degradation modes and several methods to prevent this degradation mode are discussed.",

keywords = "Accelerated aging, Catastrophic degradation, High-power, Reliability, Semiconductor lasers",

author = "Lu, \{Guo Guang\} and Tao, \{Ge Tao\} and Shun Yao and Sun, \{Yan Fang\} and Shan, \{Xiao Nan\} and Chao Wang and Yun Liu and Wang, \{Li Jun\}",

year = "2005",

month = apr,

language = "English",

volume = "26",

pages = "97--99",

journal = "Bandaoti Guangdian/Semiconductor Optoelectronics",

issn = "1001-5868",

number = "2",

}

TY - JOUR

T1 - Accelerated aging of 808 nm high-power semiconductor laser diodes

AU - Lu, Guo Guang

AU - Tao, Ge Tao

AU - Yao, Shun

AU - Sun, Yan Fang

AU - Shan, Xiao Nan

AU - Wang, Chao

AU - Liu, Yun

AU - Wang, Li Jun

PY - 2005/4

Y1 - 2005/4

N2 - Accelerated aging tests were carried out under the conditions of constant current and high-temperatures for 808 nm high-power Al-free InGaAsP/GaAs lasers. Based on the mean lifetimes of the laser diodes at high-temperatures, the mean lifetimes of lasers at room temperature were extrapolated to be in excess of 30000 h. In addition, the catastrophic degradation modes and several methods to prevent this degradation mode are discussed.

AB - Accelerated aging tests were carried out under the conditions of constant current and high-temperatures for 808 nm high-power Al-free InGaAsP/GaAs lasers. Based on the mean lifetimes of the laser diodes at high-temperatures, the mean lifetimes of lasers at room temperature were extrapolated to be in excess of 30000 h. In addition, the catastrophic degradation modes and several methods to prevent this degradation mode are discussed.

KW - Accelerated aging

KW - Catastrophic degradation

KW - High-power

KW - Reliability

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/19044368569

M3 - Article

AN - SCOPUS:19044368569

SN - 1001-5868

VL - 26

SP - 97

EP - 99

JO - Bandaoti Guangdian/Semiconductor Optoelectronics

JF - Bandaoti Guangdian/Semiconductor Optoelectronics

IS - 2

ER -

Accelerated aging of 808 nm high-power semiconductor laser diodes

Abstract

Keywords

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