Absolute determination of film thickness from photoemission: Application to atomically uniform films of Pb on Si

M. H. Upton, T. Miller, T. C. Chiang

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Abstract

A method to describe the thickness of a film by studying the growth of Pb on Si (111) substrates. Investigations show that the deposition at low temperature on a Si substrate lead to the atomically uniform Pb films. It was found that the Pb films exhibited large monolayer-by-monolayer variations in electronic structure. The data collected illustrated that the initial surface structure could be a deciding factor for the morphological development of films.

Original languageEnglish
Pages (from-to)1235-1237
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number7
DOIs
StatePublished - Aug 16 2004

Funding

This work is supported by the U.S. National Science Foundation (Grant No. DMR-02-03003). The authors acknowledge the Petroleum Research Fund, administered by the American Chemical Society, and the U.S. Department of Energy, Division of Materials Sciences (Grant No. DEFG02-91ER45439), for partial support of the synchrotron beamline operation and the central facilities of the Frederick Seitz Materials Research Laboratory. The Synchrotron Radiation Center is supported by the U. S. National Science Foundation (Grant No. DMR-00-84402).

FundersFunder number
Division of Materials SciencesDEFG02-91ER45439
National Science FoundationDMR-00-84402, DMR-02-03003
National Science Foundation
U.S. Department of Energy
American Chemical Society
American Chemical Society Petroleum Research Fund

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