Abstract
Absolute cross sections for electron-impact single ionization of Si+ and Si2+ have been measured using crossed beams of ions and electrons and calculated using a configuration-average distorted-wave method. Corrections have been made for metastable components and small fractions of nitrogen impurities in the incident ion beams. Excitation-autoionization measurably enhances the cross sections of both Si+ and Si2+. Ionization rate coefficients and fitting parameters are presented for the experimental data.
| Original language | English |
|---|---|
| Pages (from-to) | 4786-4793 |
| Number of pages | 8 |
| Journal | Physical Review A - Atomic, Molecular, and Optical Physics |
| Volume | 47 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1993 |