Absolute cross sections for electron-impact single ionization of Si+ and Si2+

N. Djurić; E. W. Bell; X. Q. Guo; G. H. Dunn; R. A. Phaneuf; M. E. Bannister; M. S. Pindzola; D. C. Griffin

doi:10.1103/PhysRevA.47.4786

Absolute cross sections for electron-impact single ionization of Si+ and Si2+

N. Djurić, E. W. Bell, X. Q. Guo, G. H. Dunn, R. A. Phaneuf, M. E. Bannister, M. S. Pindzola, D. C. Griffin

Electrical & Chemical Operations

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Abstract

Absolute cross sections for electron-impact single ionization of Si+ and Si2+ have been measured using crossed beams of ions and electrons and calculated using a configuration-average distorted-wave method. Corrections have been made for metastable components and small fractions of nitrogen impurities in the incident ion beams. Excitation-autoionization measurably enhances the cross sections of both Si+ and Si2+. Ionization rate coefficients and fitting parameters are presented for the experimental data.

Original language	English
Pages (from-to)	4786-4793
Number of pages	8
Journal	Physical Review A - Atomic, Molecular, and Optical Physics
Volume	47
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevA.47.4786
State	Published - 1993

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abstract = "Absolute cross sections for electron-impact single ionization of Si+ and Si2+ have been measured using crossed beams of ions and electrons and calculated using a configuration-average distorted-wave method. Corrections have been made for metastable components and small fractions of nitrogen impurities in the incident ion beams. Excitation-autoionization measurably enhances the cross sections of both Si+ and Si2+. Ionization rate coefficients and fitting parameters are presented for the experimental data.",

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T1 - Absolute cross sections for electron-impact single ionization of Si+ and Si2+

AU - Djurić, N.

AU - Bell, E. W.

AU - Guo, X. Q.

AU - Dunn, G. H.

AU - Phaneuf, R. A.

AU - Bannister, M. E.

AU - Pindzola, M. S.

AU - Griffin, D. C.

PY - 1993

Y1 - 1993

N2 - Absolute cross sections for electron-impact single ionization of Si+ and Si2+ have been measured using crossed beams of ions and electrons and calculated using a configuration-average distorted-wave method. Corrections have been made for metastable components and small fractions of nitrogen impurities in the incident ion beams. Excitation-autoionization measurably enhances the cross sections of both Si+ and Si2+. Ionization rate coefficients and fitting parameters are presented for the experimental data.

AB - Absolute cross sections for electron-impact single ionization of Si+ and Si2+ have been measured using crossed beams of ions and electrons and calculated using a configuration-average distorted-wave method. Corrections have been made for metastable components and small fractions of nitrogen impurities in the incident ion beams. Excitation-autoionization measurably enhances the cross sections of both Si+ and Si2+. Ionization rate coefficients and fitting parameters are presented for the experimental data.

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JO - Physical Review A - Atomic, Molecular, and Optical Physics

JF - Physical Review A - Atomic, Molecular, and Optical Physics

IS - 6

ER -

Absolute cross sections for electron-impact single ionization of Si+ and Si2+

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