TY - GEN
T1 - A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications
AU - Lamichhane, Ranjan R.
AU - Ericsson, Nance
AU - Frank, Shane
AU - Britton, Chuck
AU - Marlino, Laura
AU - Mantooth, Alan
AU - Francis, Matt
AU - Shepherd, Paul
AU - Glover, Michael
AU - Perez, Sonia
AU - McNutt, Ty
AU - Whitaker, Bret
AU - Cole, Zach
PY - 2014
Y1 - 2014
N2 - Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.
AB - Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.
UR - http://www.scopus.com/inward/record.url?scp=84905492993&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2014.6856064
DO - 10.1109/ISPSD.2014.6856064
M3 - Conference contribution
AN - SCOPUS:84905492993
SN - 9781479929177
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 414
EP - 417
BT - Proceedings of the 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014
Y2 - 15 June 2014 through 19 June 2014
ER -