A voltage-controlled oscillator for a 300 MHz high-temperature transceiver realized in 0.5 μm SOS technology

A. P. Moor, J. M. Rochelle, C. L. Britton, J. A. Moore, M. S. Emery, R. L. Schultz

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

This paper presents a study of the design of a 300-MHz voltage-controlled oscillator (VCO) implemented in a 0.5-μm Silicon-On-Sapphire (SOS) CMOS technology. The circuit is designed for use in a frequency synthesizer in a high-temperature (200°C) transceiver. Several issues relating to high-temperature applications as well as the overall system architecture are presented. The design of the VCO is emphasized in this paper, but a programmable divider, phase detector/charge pump and loop filter were also designed for use in closed-loop tests of the VCO and will also be briefly discussed. Prototyping and testing procedures are discussed and the results of the prototyped circuits are evaluated.

Original languageEnglish
Pages614-617
Number of pages4
StatePublished - 2001
Externally publishedYes
Event2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001) - Dayton, OH, United States
Duration: Aug 14 2001Aug 17 2001

Conference

Conference2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001)
Country/TerritoryUnited States
CityDayton, OH
Period08/14/0108/17/01

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