Abstract
We present a study on the temperature and field dependence of the microwave surface impedance Zs in thin films of the superconducting MgB2 compound. Samples were prepared by e-beam evaporation of boron on r-plane sapphire followed by an ex situ annealing in Mg vapour. Critical temperature values range between 26 and 38 K. Surface impedance measurements (Zs = Rs + iXs) were performed from 2 K close to Tc in the microwave region up to 20 GHz via parallel plate or dielectrically loaded resonators in 'symmetric' (two MgB2 films) and asymmetric (an MgB2 film and a commercial YBCO control film) configurations. At high microwave power, frequency domain measurements show a characteristic signature associated with weak links and this appears to be the limiting factor governing the performance of these films.
Original language | English |
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Pages (from-to) | 260-263 |
Number of pages | 4 |
Journal | Superconductor Science and Technology |
Volume | 16 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2003 |